以三甲基铝(TMA)和H2O为前驱体制备的Al2O3薄膜:沉积速率为0.1 nm/cycle,表面粗糙度为0.46 nm,对550 nm波长光透过率为99.2%,薄膜厚度不均匀性为1.89%,200 nm的Al2O3薄膜的水汽透过率为1.55×10-4 g/m2/day.%In this paper, Al2O3 thin films were fabricated by atomic layer deposition (ALD).The ...
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On adsorption of aluminium and methyl groups on silica for TMA/H2O process in atomic layer deposition of aluminium oxide nano layersALDchemisorptionaluminum oxideA detailed chemisorption mechanism is proposed for the atomic layer deposition (ALD) of aluminium oxide nano layers using trimethyl aluminum (...
Interface and material characterization of thin Al2O3 layers deposited by ALD using TMA/H2O. J Non- Cryst Solids 2002;303(1):17-23.Gosset LG, Damlencourt JF, Renault O, Rouchon D, Holliger P, Ermolieff A, Trimaille I, Ganem JJ, Martin F, Semeria MN. Inter- face and material ...
TMAWaterFilm uniformityA three-dimensional Computational Fluid Dynamics model is built for a commercial Atomic Layer Deposition (ALD) reactor, designed to treat large area 20cm substrates. The model aims to investigate the effect of the reactor geometry and process parameters on the gas flow and ...
We demonstrate the atomic layer deposition (ALD) of Gd x Al2- x O3 layers using Gd( i PrCp)3, trimethyl-aluminum (TMA), and H2O or O3. Process windows for both H2O and O3 as oxidants are explored. H2O is shown to lead to better Gd x Al2- x O3 film properties than O3, ...
We propose that the post-deposition oxidation of the IGZO surface is essential for improving the interface quality, with Al2O3 prepared by atomic layer deposition (ALD) employing a common metal precursor trimethylaluminum (TMA). Here, the ALD-Al2O3 process was conducted using H2O as an ...
We demonstrate the atomic layer deposition (ALD) of GdxAl2-xO3 layers using Gd(iPrCp)3, trimethyl-aluminum (TMA), and H2O or O3. Process windows for both H2O and O3 as oxidants are explored. H2O is shown to lead to better GdxAl2-xO3 film properties than O3, although the accessible...
This model integrates factors such as surface reactions and gas partial pressures within the ALD chamber. Experimentally, Al2O3 films were deposited at varied TMA and H2O flow rates, with system conductance guiding these rates across different temperature settings. Film properties were rigorously ...