Optical band-gapDensity of statesElectron injection, Hole-to-electron effective mass ratioThe effect of reduced graphene oxide (rGO) on the performance of rGO/TiO2 composite-based dye-sensitized solar cells (DSSCs) is studied. rGO was mixed with TiO2 in an aqueous solution at different mass ...
The optical band gap of 3.03 eV for bulk-rutile increased for the thin films to 3.37 on sapphire. The band gap of 3.20 eV for bulk-anatase increases to 3.51 on SrTiO3. In order to interpret this expansion, ab-initio calculations were performed using the Vienna ab-initio software. The ...
The optical bandgaps of TiO2 and Fe2O3 have been determined to be 3.25 and 2.20 eV, respectively, in Fig. 5. Therefore, the conduction band offset ∆Ec (CBO) at the interface of Fe2O3-TiO2 is estimated to be 1.20 eV. Considering the band structure of TiO2 vs. standard hydrogen ...
occupied mid-gap states attributed to a hybridization of O-2p with halogen 1 s orbitals were also predicted. Although such states are beneficial for the oxide’s photocatalytic activity as they significantly reduce the optical band gap with respect to that of undoped TiO2, they might be detrim...
The optical band gap energy, Eg is derived from the intersect of the straight line with the hυ-axis of Tauc plot [73]. The Eg value for TiO2 observed in Fig. 7 is compatible (3.67 eV) with those detailed in similar study [74]. As presented in Table 1, the Eg is decreased from...
Ge and Nb co-doped anatase TiO_2 films are prepared by using radio frequency magnetron sputtering.The structures,resistivities and band gap properties of the films,which depend on Ge and Nb doping amounts,sputtering power and annealing temperature,are discussed.It is found that the band gap an...
(2 0 0) planes. The elemental properties show the presence of TiO2and NiO. The optical band gap, and other optoelectronic properties were also investigated. These findings will enhance the study of cheap, efficient and sustainable alternate materials for solar energy development and affordable ...
By methods of anodizing and ion layering were obtained films TiO2/V2O5 and TiO2 / BiVO4. With help of spectral studies of photoelectrochemical and optical properties, the band gap and quantum yield of photoelectrochemical current were determined depends on the ratio of films thickness and the parame...
The optical cut-off points are increasingly red-shifted and the absorption edge is shifted over the higher wavelength region with Fe content increasing. As Fe content increases, the optical band gap decreases from 3.03 to 2.48 eV whereas the tail width increases from 0.26 to 1.43 eV. The X-...
gap from bulk Ge value to 1.14 eV was evidenced in both photocurrent spectra and optical reflection-transmission experiments, in good agreement with quantum confinement induced bandgap broadening in Ge nanocrystal with sizes of about 5 nm as found from HRTEM and XRD investigations. A non...