The controller is configured to track a sub-threshold leakage current through a number of memory cells of the array and determine a threshold voltage based on the sub-threshold leakage current.Paolo FantiniPaolo AmatoMarco Sforzin
High leakage current and threshold voltage shift(ΔVth) are demerits of a-Si:H TFT. These characteristics are influenced by gate insulator and active layer film quality, surface roughness, and process conditions. The purpose of this investigation is to improve off current(Ioff) and ΔVth charac...
9 RegisterLog in Sign up with one click: Facebook Twitter Google Share on Facebook threshold current The minimum current needed to cause a device to activate. Copyright © 1981-2024 byThe Computer Language Company Inc. All Rights reserved. THIS DEFINITION IS FOR PERSONAL USE ONLY. All other...
Dual threshold voltage design is the most effective technique for reducing leakage current of integrated circuits. In this paper, we put forward an average leakage current macromodeling for dual-threshold circuits and propose two methods to conquer it, table-lookup based simulation and statistical anal...
Its leakage current density was 18.2 ... N Tsuyukuchi,K Nagamatsu,Y Hirose,... - 《Japanese Journal of Applied Physics Pt Letters & Express Letters》 被引量: 14发表: 2014年 Threshold voltage control using SiNx in normally off AlGaN/GaN HFET with p-GaN gate The threshold voltage (Vth) ...
Namely, if the threshold voltage is set high enough so that a negative shift in threshold voltage will not increase the leakage current in the off-state, then the primary effect will be to increase the on-state resistance by decreasing the effective gate voltage. The instability due to ON-...
The MTCMOS is an attractive design to reduce the leakage current in idle state. Sleep-to-Active mode transition is an important concern in MTCMOS circuit because it produces ground bounce noise. In this paper, Threshold Voltage tuning method with MTCMOS circuit is used to reduce the ground ...
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(MOSFET) Current-Voltage (I-V) characteristics including voltage threshold (VT) and drive current strength (Idsat). Leakage power consumption is strongly related to VT, and VDD while switching power consumption is strongly related to VDD2and the designer's ability to clock gate circuits and ...
Subthreshold leakage current exponentially decreases with increasing threshold voltage. The leakage current of a cutoff high-Vt transistor is significantly lower as compared to a low-Vt transistor. The leakage currents in a dual-Vt circuit can be reduced by employing a greater number of high-Vt tra...