Thin film transistor The object described above can be achieved by realizing a high mobility thin film transistor device in a manner forming a channel with crystal grains having large grain size and controlled crystal orientations by paying attention to a fa... S Yamaguchi,M Hatano,T Shiba,.....
TFT-LCD devices include a plurality of pixels and each pixel includes a thin-film transistor (TFT) and an opaque LDD electrode which is capacitively coupled to a portion of the TFT's active layer, so that an impurity doped LDD region is not necessary and improved device characteristics can ...
A thin-film transistor (TFT) and a method for manufacturing the thin-film transistor using a color filter as a dielectric layer so as to drive an organic light-emitting diode. The thin-film transistor comprises: a substrate; a first poly-silicon mesa formed on the substrate; an insulating ...
15.1.1The history of thin-film transistors Thin-film transistor(TFT) is a special kind of field-effect transistor (FET) whose functional components are thin-film materials including the active semiconductor,dielectric, and electrode layers. Its history is the oldest one concerning semiconducting device...
摘要: PROBLEM TO BE SOLVED: To provide a thin-film transistor whose field-effect mobility is improved, whose leakage current is decreased at the same time and whose display characteristics of an AM-LCD(active matrix liquid crystal display) is improved....
A thin-film transistor including a channel layer being formed of an oxide semiconductor transparent to visible light and having a refractive index of nx, a gate-insulating layer disposed on one face of the channel layer, and a transparent layer disposed on the other face of the channel layer ...
A thin-film transistor panel comprises an insulative substrate, a plurality of thin-film transistor elements arranged at predetermined intervals on said substrate, and wirings electrically connecting the thin- film transistor elements characterized in that the thin-film transistor element comprises a gate...
PROBLEM TO BE SOLVED: To eliminate contamination in the interface between the first and second layered gate-insulation films of a TFT, by performing continuously in a single creating apparatus the process for forming its MOS interface on a semiconductor thin film and the process for forming its ...
A semiconductor device suitable for use in a flat display LCD according to an active matrix display type device comprising a-Si thin film transistor (TFT) elements is provided. The TFT which is a forward stagger type transistor is produced by forming a light shielding film (2) and, after fo...
e.g.diamondfilm：金刚石 Si e.g.ProductsofCVD •(epitaxial)Sisubstrate,•polysilicon,•variousSiO2films,•low-temperatureoxide (LTO),•borophosphosilicateglass (BPSG),•Wplugs Schematiccross-sectionalviewofanMOStransistorstructure ManyvariantsofCVDprocessing•atmosphericpressure(APCVD),•low-...