The structure of diode 翻译结果4复制译文编辑译文朗读译文返回顶部 This structure of the 2-pole tube 翻译结果5复制译文编辑译文朗读译文返回顶部 This kind of structure diode 相关内容 aThe years passed.He gave up flying and began sailing.He enjoyed it greatly.Chichester was already 58 years old when...
The laser diode includes a substrate (1) with a buffer layer (2) formed on top, a clad layer (3) formed on the intermediate layer, an active layer (4) formed on the clad layer, another clad layer (5) formed on the active layer, intermediate layers (10, 20) formed on the latter ...
In this paper,the organic light emitting device (OLED) with the structure of ITO/m-MTDATA/Meo-TPD/Alq/LiF/Al has been fabricated using Alqas a light-emitting layer, m-MTDATA(4,4',4"-tri(3-methyl-phenylphenylamino) tripheny- lamine) as a hole injection buffer layer and Meo-TPD (N...
Figure 3.(a) Schematic of the n-type Sn-doped β-Ga2O3/p-type N-doped β-Ga2O3homojunction diode (Vpn). (b) I–V and (c) C–V curves with the applied voltage Vnnon Pad 1/2 and the applied voltage Vppon Pad 3/4. (d) Forward current density and Ron,spversus applied voltage...
Figure 1.The structure of a Schottky-barrier detector diode: (1) semiconductor substrate, (2) epitaxial film, (3) metal-semiconductor contact, (4) metal film, (5) terminal Schottky barrier diodes are fabricated by depositing a thin film of metal—for example, Au, Al, Ag, or Pt—on th...
Photodiode cell structure of photodiode integrated 优质文献 相似文献 参考文献Optical semiconductor integrated circuit device and manufacturing method for the same Optical semiconductor integrated circuit device and manufacturing method for the sameIn an optical semiconductor integrated circuit device in which ...
Schottky-barrier diode and method of forming the diode Diode (100), comprising: a semiconductor substrate (101); a doped region (110) in the substrate, the doped region having a first conductivity type; is arranged a grave isolation structure (120) laterally around a portion (111) of the ...
et al. Highly uniform, electroforming-free, and self-rectifying resistive memory in the Pt/Ta2O5/HfO2−x/TiN Structure. Adv. Funct. Mater. 24, 5086–5095 (2014). Article CAS Google Scholar Ganesh, P. et al. Doping a bad metal: Origin of suppression of the metal-insulator transition...
the soft anharmonic nature of the HaP structure may be beneficial in self-healing mechanisms of the material9,10,11, allowing for low-energy synthesis routes in their fabrication. On the other hand, pairing of anharmonic fluctuations and optoelectronic processes for key quantities of HaPs,e.g....
专利名称：In the structure of the light-emitting diode and the production 发明人：林 宏绽 家銘,▲き▼ 振瀛 申请号：JP2007284034 申请日：20071031 公开号：JP4804444B2 公开日：20111102 专利内容由知识产权出版社提供 摘要：Array 申请人：泰谷光電科技股▲ふん▼有限公司 地址：台湾南投縣南投市自強三...