Pantelides (Ed.), The Physics of SiO2 and its Interfaces, Pergamon, New York, 1978, p. 333.F. B. McLean, H. E. Boesch, Jr., and J. M. McGarrity, The Physics of SiO2 and Its Interfaces, S. T. Pantelides (Ed.), Pergamon Press: New York (1978).Galeener, F L, Mickelsen,...
The chemical structure of thin SiO2 films and SiO2-Si interfaces has been investigated using high-resolution x-ray photoelectron spec... F.,J.,Grunthaner,... - 《Physical Review Letters》 被引量: 92发表: 1979年 加载更多研究点推荐 ultrathin gate oxide integrity SiO2 Si-SiO2 Interface SiC-Al...
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The unique electronic properties of semi-metals enable multiple novel device applications, including transistors, rectifiers, memories and interconnects, with enhanced performance. The low DOS in semi-metals mitigates Fermi-level pinning and Schottky barriers at interfaces with semiconductors, leading to ult...
Only a small number of employable mate- rials are currently known. Thus, the selection of a TCO with an optimal refractive index for a given device is often not feasible. This leads to significant unwanted reflection losses at the TCO and its interfaces in transparent devices, such as solar ...
The intricate flow processes in nano-pores pose limitations on the extraction of resources such as shale gas and gas hydrates. To observe water/gas two-phase flow in nano-pores, we employed molecular dynamics simulations on water/methane two-phase flow in a hydrophilic SiO2 nanoslit, and obtain...
Experiments employing photoreflectance spectroscopy have uncovered band bending due to electrically active defects at the Si(1 1 1)–SiO2 interface after sub-keV Ar+ ion bombardment. The band bending of about 0.5 eV resembles that for Si(1 0 0)–SiO2, and both interfaces exhibit two kinetic ...
Internally consistent thermodynamic computation of equilibria in the FeO-MgO-SiO2 system up to 300 kbar is carried out and phase diagrams and profiles of t
Lim, S.M. Jeong, Experimental and theoretical insights of anion regulation in MOF-derived Ni–Co-based nanosheets for supercapacitors and anion exchange membrane water electrolyzers. ACS Appl. Mater. Interfaces 15, 32436–32452 (2023). https://doi.org/10.1021/acsami.3c05224 Article CAS PubMed...
Pure Er and co-evaporated Er and Si layers were deposited near room temperature in UHV on SiO2 films grown on Si(100) wafers and were subsequently annealed at increasing temperature up to 1153 K. The samples were characterized in situ by X-ray photoelectron spectroscopy following deposition and...