Using Low Temperature Scanning Electron Microscopy (LTSEM) we have measured the bias voltage dependence of the charge output of superconducting tunnel junction detectors, which have different energy gaps Δand Δfor the base and the counter electrode, respectively. The time dependence of the detector...
We directly image an InPp–njunction depletion region under both forward and reverse bias using scanning voltage microscopy (SVM), a scanning probe microscopy (SPM) technique. The SVM results are compared to those obtained with scanning spreading resistance microscopy (SSRM) measurements under zero ...
The effect of a giant change in the magnetoimpedance of a magnetic tunnel junction, which occurs at some frequencies of an ac bias voltage, has been predicted. The dependence of the effect of a giant change in the magnetoimpedance on the height and thickness of the magnetic tunnel junction ...
The empty nanogaps were characterized by measuring a current map as a function of bias voltage (Vsd) and gate voltage (Vg) at room temperature to exclude devices containing residual graphene quantum dots41. Only clean devices were selected for further measurement (see Supplementary Figs. 3-1, ...
Another key goal for the field to move forward is developing optimal approaches for parsing heterogeneity, for which many approaches have been proposed in the field of psychiatry [156]. Parsing heterogeneity refers to the process of systematically analysing distinct sources of variability within a give...
1. Reverse Biased pn Junction Leakage Current During transistor operation, MOS transistor s' drain/source and substrate junctions are reverse biased. As a result, the device's leakage current is reverse biased. This leakage current could be caused by minority carrier drift/diffusion in the reverse...
This study demonstrates a method for curing the gate dielectric of a MOSFET using Joule heat (JH) generated by forward bias current in the PN-junction in the drain-to-body (D-B) and source-to-body (SB). To accurately quantify the curing effect by the D-B JH and the SB JH, the in...
In order to reach the desired bias, we have needed to resort to a continuation method on applied potential. First, we iterate with respect to the difference of the built-in potential between drain and bulk contacts, keeping at zero V D S . Then, we iterate with respect to the drain–ga...
The yellow-edge position (Ey) shows a clearer difference: AL is the most forward; SG, LC and CS are in the center; AF, CL and AT are more in the back. For the three-edge amplitude, the red-edge amplitudes (Erm) of each grass species are more significant than the blue-edge ...
In bulk CMOS, in order to improve transistor performance, a voltage can be applied to the substrate to improve the transistor performance. The forward body biasing of substrate lowers the Vthand facilitates the creation of the channel between the source and the drain resulting in faster switching...