Gas sensorsU shape TFETZ shape TFETGas sensing requires highly sensitive and selective sensor technologies for environmental monitoring, industrial safety, and public health objectives. Although conventional MOSFET-based gas sensors are widely utilized, their detection of low quantities of gases, such as...
Therefore, in this paper, we present two novel III-V material-based inverted T-channel vertical line TFET devices: (ⅰ) Device 1 (D-1) without negative capacitance, and (ⅱ) Device 2 (D-2) with negative capacitance integration. Both of these devices leverage the unique advantages of an ...
Catalytic Metal-Gated Nano-Sheet Field Effect Transistor and Nano-Sheet Tunnel Field Effect Transistor Based Hydrogen Gas Sensor- A Design Perspective 2024, Advanced Theory and Simulations Erasure Codes for Cold Data in Distributed Storage Systems 2023, Applied Sciences (Switzerland)Mohamamd Karbalaei wa...
Gas sensingGate stackingIn this paper, a novel n+SiGe pocket layer gate stacked VTFET doping less charge plasma is proposed and analyzed using Silvaco TCAD simulation software. The proposed device will be worked as a transducer sensor which is based upon the principle of the electrostatic charge...
Magnesium Silicide Source Double Palladium Metal Gate TFET for Highly Sensitive Hydrogen Gas SensorTFETsSensitivitySilicidesSimulationHydrogenLogic gatesHeterojunctionsThis work reports the application of novel magnesium silicide (Mg\n\n.Minaxi Dassi
This work proposes a gas sensor device structure based on conducting polymer (CP) gate and magnesium silicide source heterojunction FET (MSH-DG-TFET) to sense gases such as hexane, methanol, isopropanol, dichloromethane and chloroform. Source material engineering is implemented in the proposed device...
In this paper we propose, pressure sensor based on Micro-electromechanical systems (MEMS) based cantilever structure and pocket doped double-gate tunneling field effect transistor (DG-TFET). The proposed MEMS architecture of pressure sensor working on the principle of capacitive gate coupling and work...
This study presents a numerical analysis of a highly sensitive catalytic metal gate-based gas sensor utilizing a hetero-material arsenide/antimonide tunneling interfaced junctionless Tunnel Field-Effect Transistor (H-JLTFET). The sensor is designed to detect hydrogen, oxygen, and ammonia gases by ...
Gagan KumarVLSI Design Department of ECEAshish RamanVLSI Design Department of ECEElsevier LtdSuperlattices & MicrostructuresKumar G, Raman A. Pressure sensor based on MEMS nano- cantilever beam structure as a heterodielectric gate electrode of dopingless TFET. Superlattices Microstruct, 2016, 100: 535...