This suggests that either of the two methods can be employed to obtain a reliable bandgap for direct and indirect optical gap semiconductors.Peverga R. Jubuhttps://ror.org/05hgtp764grid.469208.1Department of PhysicsJoseph Sarwuan Tarka University (Federal University of Agriculture) P.M.B. 2373...
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The bandgap of a semiconductor nanomaterial can either be direct, indirect, direct forbidden, or indirect forbidden allowed transition depending on the material type [3,5]. The universal UV–vis–NIR technique for optical bandgap measurement allows for estimation in both direct and indirect energy ga...
The extrapolated linear line obtained through linear regression (using the program) was observed to pass through the linear portion of the Tauc's plot. The optical band gap was found to be decreasing linearly with the alpha fluence for both direct and indirect transitions. Also the direct band ...
In this study, we examine the reproducibility of Tauc plot slopes for ZnO as a model direct-gap material and compare these experimental values with the theoretically derived slope. In contrast to the band gap accuracy, the experimental slope values varied by several orders of magnitude. The ...
The near-edge region can be fitted to a simple expression in which the intercept gives the band-gap and the fitting exponent identifies the electronic transition as direct or indirect (see Tauc et al., Phys. Status Solidi 15, 627 (1966); these are often called “Tauc” plots). While ...
The optical energy gap valuesare distinguished by the type of indirect transition (n=2) is 3.40 eV (1 hour), 3.15 eV (2 hour), 2.85 eV (3 hour) and direct transition (n=1/2) is 2.58 eV (1 hour), 2.31 eV (2 hour), 1.70 eV (1 hour)....
Tauc plotTauc exponentOptical band gapDFT+UTiO2 nanotubesIn this work, a facile method allowing for estimation of the exponent in the Tauc equation directly from the UV鈥搗is spectra is presented. It is based on the Taylor expansion of the logarithmic version of the Tauc equation. The Tauc ...
The near-edge region can be fitted to a simple expression in which the intercept gives the band-gap and the fitting exponent identifies the electronic transition as direct or indirect (see Tauc et al., Phys. Status Solidi 15, 627 (1966); these are often called "Tauc" plots). While the...
It was reported that the band edges, in the amorphous materials, have contributions from the different orbital types of the metallic complex and ligand. Therefore, it is difficult to predict whether the band will be a direct or an indirect type [15,49]. In this regard, it should be pointe...