A charge-density-wave oscillator based on an integrated tantalum disulfide–boron nitride–graphene device operating at room temperatureCondensed Matter - Mesoscale and Nanoscale PhysicsCondensed Matter - Other
A relaxation oscillator in which the occurrence of saturation in a magnetic core initiates a change in the conductive state of amplifying or switching elements. saturable-core reactor See saturable reactor. saturable ferrite-core switch A keyboard switch. In the off position, the magnets straddling ...
Weyl semimetal state in TaP single crystal TaP has a body-centred-tetragonal structure without inversion symmetry (space group I41md), depicted in Fig. 1a. The lattice parameters obtained from our X-ray diffraction measurement at room temperature are a=b=3.32 Å and c=11.34 Å (...
alpha phase at room temperature (alpha needles grains with approximately 250 HV). As the SPS process entails intermediate cooling rates, between furnace and water cooling, the result found is consistent. In addition, it should be emphasized that, due to the fact that the cooling rates are ...
In this study, tantalum carbide (TaC) samples were placed in a diamond anvil cell to study the equation of state at room temperature and high pressure using synchrotron radiation X-ray diffraction. By fitting the data at ambient pressure and up to the highest pressure of 38.5 GPa, we ...
The following values are obtained: 2Δ(0)=0,65 meV, T c =2,11 K for the amorphous state after quenched condensation and 2Δ(0)=1,24 meV, T c =4,06 K for the crystalline state after annealing at room temperature. The reduced energy gap 2Δ(0)/ kT c =3,58 demonstrates that ...
B. I. et al. have demonstrated that the populated state of electrons near the lowest unoccupied state (ξLUS) is the key parameter of the adsorption strength of hydrogen on MX2surfaces. The basal-plane of 2H-TaS2possesses a relative lowξLUS(<−5.8 eV), thus possessing relatively stron...
The deposition was carried out at room temperature, in Ar atmosphere with a pressure of 5 × 10−1 Pa. To screen the entire library, three Si wafers each having a different compositional spread were sequentially used as substrates in a row of independent depositions. In order to tune the...
The perovskite structure of SC, which is favoured for ORR, is usually stabilized by partial B-site substitution with high oxidation-state cations25, such as Nb26,27, Mo28, Sb29,30 and P31,32, and these cations lead to low area-specific resistances (ASRs) at reduced temperature27–29,31...
temperature range 600–750 °C because of their relatively high mixed conductivities23,24. The perovskite structure of SC, which is favoured for ORR, is usually stabilized by partialB-site substitution with high oxidation-state cations25, such as Nb26,27, Mo28, Sb29,30and P31,32, and ...