With allowance for ordering of 0953-8984/8/43/020/img1, the phase diagram of the Ta - C system has been calculated and constructed. The effects of non-stoichiometry and ordering on the period of a base B1-type lattice of tantalum carbide and on the superconducting critical temperature have...
(Equi Diagram, Meta Phases; Experimental) Google Scholar G.V. Samsonov, “Intermediate Stages in Carbide Formation Reactions of Ti, Zr, V, Nb and Ta,”Obshch, Neorg. Fizi. Khim., 287–296 (1957) in Russian. (Equi Diagram, Meta Phases, Thermo; Experimental) G. Brauer and H. Müller...
Examples include germanium, lead sulfide, lead telluride, selenium, silicon, and silicon carbide. Used in diodes, photocells, thermistors, and transistors. 3. A device (or material) with an electrical conductivity that lies between metal conductors and insulator devices. 4. A material whose ...
Nevertheless, the material obtained using a stainless steel filter is sufficient for use in ceramic applications or as an initial material for carbide manufacture. The unique advantage of the plasma chemical method is the ability to collect the condensate, which can be used for raw material ...
1 Together, the selected area electron diffraction analysis (in Fe and Cr-rich areas) and the carbon distribution analysis do not show FeCrC- or FeC-type carbide formations. © 2021 The Authors. Published by Elsevier Ltd. Recommended articles...
The mixture was weighed and loaded in a tungsten carbide vial with tungsten carbide balls to give a ball to powder (BPR) ratio of 10:1. The powders were mechanically alloyed for 60 h. under an argon atmosphere in a planetary ball mill (Fritsch Pulverisette 7) with a rotational speed ...
The phase equilibria in the systems Nb-Cr-C and Ta-Cr-C at 1050 and 1000°C were also determined. The ternary carbide Nb 3 Cr 3 C was not detected.doi:10.1007/BF00774153T. F. FedorovA. A. Baikov Institute of Metallurgy, I. Franko Lvov State University, USSRN. M. Popova...
Electronic apparatus and methods of forming the electronic apparatus include a tantalum lanthanide oxynitride film on a substrate for use in a variety of electronic systems. The tan
Alternatively, the RF power may also be provided at low frequencies, such as 356 kHz, for plasma treating the depositing silicon carbide layer. Alternatively microwave and remote plasma sources may be used to generate a plasma as an alternative to RF power applications describe herein....
trap and recycle dust particles, then enters scrubber/demister units 102 and 103 for the removal of HF and H2SO4gases and mists from the gas phase. The preferred scrubbers are one which have vigorous gas/solution contact, for example, Petersen Candles, available from the Union Carbide ...