When the bus-switch transistor is turned off, the underlying isolated P-well is driven to ground by a biasing transistor in another P-well. Since the isolated P-well has a much lower doping than the N+ source and drain, the capacitance of the well-to-substrate junction is much less ...
(RAT) to a first cellular network operating according to a first RAT, the wireless communication device failing to remain on the first cellular network for more than a specified time duration, and the wireless communication device returning from the first cellular network to the second cellular ...
A method and apparatus were used copy of the current drain of the switching loop. 该方法包括以下步骤:将跨电流感测电阻器的电压与由参考电流跨匹配的参考电阻器所创建的电压相匹配;使用输出晶体管和电流感测电阻器的经缩放的匹配副本来复制输出晶体管的工作点. The method comprises the steps of: a ...
Drain Current4.5A 源漏极导通电阻Rds Drain-Source On-State Resistance0.8Ω~1.0Ω (VGS = 10 V, ID = 2.5 A) 开启电压Vgs(th) Gate-Source Threshold VoltageVth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) 耗散功率Pd Power Dissipation20W ...
In addition, a clear and fixed path is also established between the chip and IRC by fixing their position to obtain accurate measurements. The infrared region of the EM spectrum spans up to 100 µm, but the range for temperature sensing in IRC is limited to 0.7–20 µm due to the ...
To operate at full power for extended periods, the power supply will need a fan to force air over the internal components and heatsink to keep it cool. The heatsink (the one used for testing) generally remains relatively cool but the internal components will benefit by having air flowing ...
The method involves decoupling current to be measured as transformed current over a current mirror, which has a switching transistor (16) and a decoupling transistor (18). The transformed current is led through a measuring resistor (42), where an operational amplifier (22) is provided, which ca...
a•amount of itemized sub-events •相当数量被分条列述的次级事件[translate] aThe alarm outputs are FET drivers, open-drain outputs, low-side switch, capable of switching loads up to 2A at 40V. 警报产品是FET司机,打开排泄产品,低边开关,有能力在开关装载上由2A决定在40V。[translate]...
The transformed current is led through a measuring resistor (42), where an operational amplifier (22) is provided, which causes drain-source-voltage of the switching transistor to correspond to the drain source voltage of the decoupling transistor. The operational amplifier is separated form ...
A selection circuit is provided to control connection of the substrate gate of the switching transistor, and a control circuit controls the selection circuit to connect the substrate gate to the drain of the switching transistor when the voltage on an input terminal of the switching regulator is ...