The change in the switching fields of the CoCrPt–SiO2 recording layer resulting from the presence of the high-pressure Ru layer is investigated through experiments and computer simulation. The monotonous increase in the magnetic anisotropy Ku and the decrease in the intergranular exchange coupling of...
The unusual duality in the predicted electronic transport and mechanical properties could be partly reconciled if we consider that transport relies on the overlap of z2 orbitals of Ta atoms on adjacent planes, while the mechanical properties depend on weak bonding by orbitals far from the Fermi ...
This electroforming process has made the devices capable to start RS. So when negative bias voltage is applied to the top electrode in the LRS mode, resistive switching of the devices back to the HRS occurs in an abnormal way (very weak transition) as obvious from Fig. 3(c). This ...
Catherine FearnleyDiane NewellMichael HudsonStephen LeachSpringer USHarvey, P., Fearnley, C,. Newell, D., Hudson, M. & Leach, S. (1996). Coccal cell switching and the survival and virulence of C .jejuni at high oxygen tensions. In Campylobacter, Helicobacter and Related Organisms. Edited ...
perpendicular recordingMagnetic switching behavior and activation volume $(V_{rm act})$ for CoCrPt鈥揝iO$_{2}$ single layer media on two intermediate layer (IL) types of conventional ${hbox {Ru}}_{1}/{hbox {Ru}}_{2}$ (IL1) and ${hbox {RuCr}}/{hbox {Ru}}_{2}$ (IL2) are...
interface devices, including a keyboard, a video display unit, and a cursor control device or mouse (KVM), with a plurality of computers in a computer network, allowing a user to access any one or more of said computers from the user interface devices of a single terminal or workstation....
The third condition (D1·V1·n + D2·V2 ≥ 0) always As in Case I, the non-depending on ϕ conditions are shown in Equation (7), and all conditions could be fulfilled due to V1·n ≥ V2 and D1 ≤ D2, for Case II. So, from the first and the second conditions (D1·V...
The result is a metallic filament growth from the inert electrode towards the active electrode. An opposite growth direction has also been reported both for Al2O3 [18] and SiO2 [19,20]. This mechanism appears to be favored when the metal is embedded as nanoclusters within the switching ...
However, FSPM machines suffer from a limited constant power operation range due to the uncontrollable PM excitation field, which restricts the applications in variable speed drive systems requiring wide-speed operation [8,9]. Therefore, hybrid excitation flux switching (HEFS) machines have been ...
For label generation, 10 GHz optical pulses generated by a mode-locked laser diode (MLLD, 1530 nm) were modulated using known timing from the coherent packets payload pattern by an intensity modulator. The pulses were input to a 200 Gchip/s multiple optical encoder (MOE) to generate optical...