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The surface morphology of GaN is observed by atomic force microscopy for growth on GaN and AlN buffer layers leads to N-polar films, with surfaces strongly dependent on the flux conditions used. Flat surfaces can be obtained by growing as Ga-rich as possible, although Ga droplets tend to ...
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The surface morphology of GaN is observed by atomic force microscopy for growth on GaN and AlN buffer layers leads to N-polar films, with surfaces strongly dependent on the flux conditions used. Flat surfaces can be obtained by growing as Ga-rich as possible, although Ga droplets tend to ...
While a tendency of increasing SER is theoretically expected for a smaller separation, the maximum value SER enhancement has a practical limit of about 2.5 at λ = 441 nm, and separation of 20 nm due to damage on the p-GaN layer caused by the etching process....
Experimental observation of a practical limit on enhancement of the spontaneous emission rate in blue GaN-LEDs by mediating surface plasmonsSurface plasmonsLight emitting diodesHigh modulation speed of light-emitting diodes (LEDs) is of primary importance for applications in optical communication. To this...
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