Sub-gap absorption measurements are presented as a tool to characterize the amorphization and recrystallization processes in ion-implanted and annealed Si layers. The gap state density associated with the disorder introduced in the target crystalline lattice has been shown to saturate once the ...
researchers as optical absorption provides useful information for a better understanding of the electronic states and of structural disorder. The absorption in the band gap is an important qualifying parameter to determine the suitability of a material for device ...
Hyperdoped Silicon Zhen Zhu1, Hezhu Shao1, Xiao Dong1, Ning Li2, Bo-Yuan Ning1, Xi-Jing Ning3, Li Zhao2 & Jun Zhuang1 We investigated the atomic geometry, electronic band structure, and optical absorption of nitrogen hyperdoped silicon based on first-principles ...
For a one-dimensional electron-phonon system we consider the photon absorption involving electronic excitations within the pseudogap energy range. Within the adiabatic approximation for the electron - phonon interactions these processes are described by nonlinear configurations of an instanton type. We ...
We found that an increase in current was only observed when the laser spot was on the sample, indicating that absorption of light in the substrate or by charges that reside near the device does not cause any changes in the photocurrent. Further, we have also noted that the photocurrent ...
We present a comprehensive investigation of the evolution of the photoluminescence band at ~1.3 eV in plasma-deposited a-Si:H as a function of excitation frequency v~, where v~has been extended well into the band-tail region. When v~is lowered below the optical-absorption gap, the early ti...
Light-induced degradation in photoconductivity, photoluminescence, electron spin resonance (ESR), and subgap optical absorption has been performed on a sam... JH Yoon,PC Taylor,CH Lee - Journal of Non-Crystalline Solids 被引量: 16发表: 1998年 Photoinduced C70 radical anions in polymer:fullerene ...
The sharp emission near the absorption edge was observed in all samples at room temperature under ultraviolet light irradiation, p-type electrical conduction in these materials was confirmed by Seebeck measurements, and the conductivity was enhanced by substitution of Sr for La. These results ...
materials Article Crystallinity and Sub-Band Gap Absorption of Femtosecond-Laser Hyperdoped Silicon Formed in Different N-Containing Gas Mixtures Haibin Sun 1, Jiamin Xiao 2, Suwan Zhu 1, Yue Hu 2, Guojin Feng 3, Jun Zhuang 2,* and Li Zhao 1,* 1 Collaborative Innovation Center of Advanced...
are lost because they cannot be absorbed, while the excess energy of the photons with energy higher than the band gap is lost by thermalization. By choosing a small band gap semiconductor material like GaSb or Ge, losses due to limited absorption are reduced. However, thermalization losses ...