Sharifkhani, "A sub 1 V high PSRR CMOS bandgap voltage reference", Elsevier Journal of microelectronics (42), pp. 1057-1065, July 2011.M. Chahardori, M. Atarodi, and M. Sharifkhani, "A sub 1V high PSRR CMOS bandgap voltage reference," Microelectronics Journal, pp. 1057- 1065, July...
sub-1-V bandgap voltage reference, tem-perature coefficient, 1-V supply.I. INTRODUCTIONAvoltage regulators. Some of the key requirements for an idealvoltage reference are the following:1) output voltage is temperature-independent;2) output voltage is supply-independent;3) operation over a wide ...
A bandgap reference (BGR) and sub1V BGR circuits for Picowatt LSIs is proposed here. The circuits pertains pico-ampere current reference circuit, a bipolar transistor, and proportional-to-absolute-temperature (PTAT) voltage generators. The circuits neglect resistors ...
1-V supply; BiCMOS; low noise; low voltage; noise measurement; peak-to-peak noise; sub-1-V bandgap voltage reference; temperature coefficient; 机译:1-V电源;BiCMOS;低噪声;低压;噪声测量;峰峰值噪声;低于1V的带隙基准电压源;温度系数; 入库时间 2022-08-17 13:04:13 相似文献 外文文献 中文...
A Sub-1-V Linear CMOS Bandgap Voltage Reference
机译:低于1 V的高精度CMOS带隙基准电压源 获取原文 获取原文并翻译 | 示例页面导航 摘要 著录项 相似文献 相关主题 摘要 A third-order, sub-1 V bandgap voltage reference design for low-power supply, high-precision applicationsis presented. This design uses a current-mode compensation technique and ...
well is commonly used toimplement a bandgap reference [1]–[3]. The minimum supplyvoltage needs to be greater than 1 V due to two factors: 1) thereference voltage is around 1.25 V which exceeds 1-V supply[4], [5] and 2) low-voltage design of the proportional-to-abso-lute-...
The New Proposed Core for a Sub-1V Reference A BiCMOS Process with npns Figure 1 shows the proposed core. Figure 1. New bandgap core. Mathematically, it can be shown that V0becomes a scaled version of the bandgap voltage, VBG:
A CMOS Bandgap Reference Circuit with Sub-1-V Operation英文资料.pdf,A CMOS BANDGAP REFERENCE CIRCUIT FOR SUB-1-V OPERATION WITHOUT USING EXTRA LOW-THRESHOLD-VOLTAGE DEVICE Ming-Dou Ker, Jung-Sheng Chen, and Ching-Yun Chu Nanoelectronics Gigascale Systems
机译:仅使用一个BJT的1V以下CMOS带隙基准电路的设计 获取原文 获取原文并翻译 | 示例 开具论文收录证明 >> 页面导航 摘要 著录项 相似文献 摘要 This paper describes new CMOS bandgap reference (BGR) circuits capable of providing sub-1-V voltage reference while using only one BJT. The circuits use...