RF-PECVDThermal MOCVDThin films of hydrogenated amorphous silicon carbide (a-SiC:H) and crystalline silicon carbide (c-SiC) with different compositions were deposited on Si(100) substrates by both RF plasma enh
Jung CK,Lim DC,Jee HG,et al.Hydrogenated amorphous and crystalline SiC thin films grown by RF-PECVD and thermal MOCVD;comparative study of structural and optical properties. Surface and Coatings Technology . 2002Jung, C.-K., D.-C. Lim, H.-G. Jee, M.-G. Park, S.-J. Ku, K.-S....
Raman spectroscopy study of the SiC films were performed by using a Raman microscope. Irradiation of samples with neutrons to fluencies A(7.9×10~(14) cm~(-2)), B(5×10~(15) cm~(-2)) and C(3.4×10~(16) cm~(-2)) was performed at room temperature. Raman spectroscopy results of...
RF-PECVDThermalMOCVDThin films of hydrogenated amorphous silicon carbide (a-SiC:H) and crystalline silicon carbide (c-SiC) with different compositions were deposited on S…[C.-K.JungD.-C.LimH.-G.JeeM.-G.ParkS.-J.Surface & Coatings Technology...
RF-PECVDThermalMOCVDThin films of hydrogenated amorphous silicon carbide (a-SiC:H) and crystalline silicon carbide (c-SiC) with different compositions were deposited on Si(1 0 0) substrates by both RF plasma enhanced chemical vapor deposition and thermal metal organic chemical vapor deposition ...