The present invention is directed to an improved base-collector junction transistor structure capable of higher junction breakdown voltages and lower junction capacitances than bipolar transistors of the prior art. A narrow trench (148) is used to positively affect junction breakdown voltage and ...
The present invention is directed to an improved base-collector junction transistor structure capable of higher junction breakdown voltages and lower junction capacitances than bipolar transistors of the prior art. A narrow trench (148) is used to positively affect junction breakdown voltage and junction...
A semiconductor laser is basically a p-i-n diode. A p-i-n junction is formed by bringing a p-type and an n-type semiconductors into contact with each other with an intrinsic active layer between them. When an electrical current is passed through such a device, laser light emerges from ...
;CONSTITUTION: A heat sink metal layer 22 insulated from an anode electrode 3 or a cathode electrode 7 is formed on the P<Sup>+</Sup> layer or N<Sup>-</Sup> layer side which forms a diode PN junction. A ceramic substrate 12 with a diode chip 1 mounted is stored into a case 14...
Disclosed is a junction structure of a device, which enables to prevent mutual diffusion of Al and Si when a semiconductor layer such as an n+-Si layer and an Al alloy layer are directly joined with each other, while maintaining ohmic characteristics and assuring low resistance characteristics ...
A transition between each of the second port sections and the field stop region forms a respective pn-junction that extends along a first lateral direction. A diffusion voltage of a respective one of the pn-junctions in an extension direction perpendicular to the first lateral direction is ...
The structure of an IMPATT microwave diode bears many similarities to that of an ordinary PN junction diode and also to a Schottky diode. The differences are created in the fabrication process by altering the structure so that it can operate in its avalanche mode so that th...
A linearly graded silicon p- n junction diode has been analysed under avalanche breakdown condition taking into account the effect of impurity and mobile c... B Som,SK Roy - 《Solid State Electronics》 被引量: 4发表: 1972年 Photoelectron Multipliers Based On Avalanche Pn-I-Pn Structures Its...
Trench-gated power MOSFET with protective diode having adjustable breakdown voltage A power MOSFET includes a trenched gate which defines a plurality of MOSFET cells. A protective diffusion is created, preferably in an inactive cell, so as to form a PN junction diode that is connected in parallel...
A process is used to fabricate diodes having an emitter contacted p-n junction. A stack of n.sup.+ -type polysilicon layers are formed one upon the other upon a p-type silicon substrate. In an accordingly fabricated diode, native oxide layers that forms between the n.sup.+ -type ...