Pin photodiode structureA PIN photodiode structure includes a substrate, a P-doped region disposed in the substrate, an N-doped region disposed in the substrate, and a first semiconductor material disposed in the substrate and between the P-doped region and the N-doped region.Hung-Lin Shih...
1.Analysis of Basic Connotation of Sports Training Theory of PIN Being CombinedPIN结合的运动训练理论基本内涵 2.Substitution Measurement of Junction Capacitance of PIN Photodiode and Regression Analysis;PIN管结电容的代换测量与回归分析 3.The Fabrication and Research of PIN Single Junction Amorphous Silicon...
摘要: A PIN photodiode structure includes a substrate, a P-doped region disposed in the substrate, an N-doped region disposed in the substrate, and a first semiconductor material disposed in the substrate and between the P-doped region and the N-doped region....
A new structure for PIN-diode using μ-poly Si film is proposed. After hydrogenation of μ-poly Si film formed by Blue Multi Diode Laser Annealing (BLDA), ... K Sugihara,S Chinen,H Goga,... - International Display Workshops 被引量: 0发表: 2012年 Polydiode structure for photo diode An...
United States Patent US7732886 Note: If you have problems viewing the PDF, please make sure you have the latest version ofAdobe Acrobat. Back to full text
The transparent conductor is formed over the photo sensors and the conductive element exposed on the surface of the interconnection layer.doi:US6649993 B2Jeremy A. TheilUSUS6649993 2001年3月16日 2003年11月18日 Agilent Technologies, Inc. Simplified upper electrode contact structure for PIN diode ...
Introduction Several types of photodetector for use with the microwave modulated optical signals have been developed over the last few years. Of all the materials, silicon PIN photodiodes are able to generate at moderately high response speed semiconductor devices since it has low capacitance, which ...
The metal layer of the PIN photodiode of the TFT-PIN array substrate is perforated to have at least one hole, whereby UV-light can pass through the TFT-PIN array substrate to cure UV curable LOCA. Therefore, UV curable LOCA can be used as an adhesive layer in the assembly structure of...
Optimization of a high-resolution real-time solid state x-ray detection system for mammography A matrix sensor (12 cm x 12 cm) consists of a high luminance CsI:Tl crystal grown with columnar structure on the top of a pin photodiode matrix ... S Chapuy,Z Dimcovski,JS Graulich,... -...
Examples of high-speed semiconductor light-receiving elements include\na PIN photodiode (PIN-PD) and an avalanche photodiode (APD). Among these examples,... - 《Electronics Newsweekly》 被引量: 0发表: 2022年 Avalanche photodiode semiconductor structure having a high signal-to-noise ratio and ...