CONSTITUTION:A base layer 2 of an NPN transistor is covered by an emitter electrode 10 of, e.g., Al. Therefore, even if impurity ions, which are transmitted through a surface protecting film 8, are intruded, the impurity ions do not reach an oxide film 7 on a base region 2 between ...
A transistor structure comprises a patterned N-type transparent oxide semiconductor formed over a substrate as a base, and a patterned p-type organic polymer semiconductor formed on the patterned N-ty
Based on the names of these regions, we might expect conventional current to enter through the collector and leave through the emitter. As it turns out, though, that’s only true for an NPN transistor. But here we have what we could call the opposite type, PNP. That fact means that the...
A programmable read only memory cell comprises a semiconductor substrate (20) having an epitaxial n-type layer (22) forming a collector region for the NPN transistor which also includes a base region (28), a contact region of p-type base... ELLSWORTH Daniel Lloyd,SULLIVAN Paul Andrew 被引量...
A field-effect transistor is a semiconductor device that uses the electric field effect of the control input circuit to control the output circuit current and is named after it. Because it only depends on the majority carrier in the semiconductor to conduct electricity, it is also called th...
A complementary bipolar transistor device, made of two separate conductive films such as two highly doped polysilicon films of opposite conductivity types. The doped polysilicon film is used for a base of NPN transistor and an emitter of a PNP transistor whereas the other doped polysilicon film is...
A thickness W in the P-well region 46 is suppressed to a minimum, so as to allow the transistor operation of parasitic NPN transistor formed from the N region 44, P-well region 46 and N<Sup>+</Sup>- embedded layer 48. PNPN thyristor structure is formed, so as to make this ...
Computer simulation of the scaled power bipolar SHF transistor structures New advanced technology for creation of the npn power silicon bipolar SHF transistor structure is proposed. Preferences of the advanced technology in compa... VV Nelayev,VA Efremov,YP Snitovsky - Proceedings of SPIE - The ...
PURPOSE: To obtain an improved cell structure which is programmable by providing a resistance and an NPN transistor(TR) or PNP lateral transistor in a linear array state together with an open PNP structure. CONSTITUTION: This structure has a 1st P-doped emitter region having a 1st doping level...
A new test structure for parameter extraction is presented and implemented in a double-polysilicon bipolar junction transistor (BJT) process. The test structure is basically a real BJT, but without the intrinsic base. The test structure allows extraction of the base, collector and emitter impedance...