A transistor permeable base comprises a source region 3 and a drain region 4 formed facing each other in a layer of semiconductor - conductor semi - insulator 5, and a gate electrode 2 having an opening of the penetration of the current, through which flows a current of the channel, ...
Epitaxy structure of a 1.5 μm n-p-n InGaAsP-InP transistor laser An InGaAsP-InP transistor laser (TL) working at 1.5 渭m and its epitaxy structure with MQW active layer buried between unsymmetrical upper and lower wavegu... ZG Duan,XD Huang,N Zhou,... - 《Acta Phys Sin》 被引量:...
A transistor structure (10) has a substrate (12). A first transistor is formed within the substrate (12) having a source region (38) , a drain region (30), and a gate electrode formed by a first spacer (26a) . A second transistor is formed within the substrate (12) by the source...
(c, d) Normalized resistance change of graphene-based TCEs as a function of strain. (e, f) The pictures of all-carbon transparent and stretchable transistor used to switch the LED under stretching state [168]. (A colour version of this figure can be viewed online.) The flexible and ...
A process for fabricating SRAM cells, including MOSFET devices, as well as thin film transistor structures, has been developed. The process features self-alignment of the MOSFET polysilicon gate structure to the polysilicon gate structur... JY Lee,SG Wuu - US 被引量: 17发表: 1997年 A 65nm...
Structure of thin film transistor and gate terminal having a capacitive structure composed of the TFT elements Susumu OhiShigeru KimuraUSUS5936292 * Jun 17, 1997 Aug 10, 1999 Nec Corporation Structure of thin film transistor and gate terminal having a capacitive structure composed of the TFT element...
aSemiconductor structure for MOSFET, has single well formed in contact with part of back gate of n-type double gate transistor and part of back gate of p-type double gate transistor, where gates are doped with same doping agent 半导体结构为MOSFET,有唯一合格与一部分的n类型双门晶体管后面门和...
Design and Analysis of the X-Waveguide Optical Switch in a MESFET Geometry Theoreticalanalysisofthechangeinrefractiveindex,inthechannelofaGaAsMESFET(metaloxidesemiconductorfieldeffecttransistor)structure,hasbeenpresentedforthefirsttimeTheanalysisshowsgreatpotentialapplications,tousetheMESFETgeometries,inthedesi... ...
A vertical channel transistor comprising:;a structure made of a given bismuth-based material which passes through a gate block where the structure comprises a channel region which extends through the gate block and source and drain regions on either side of the channel region and of the gate blo...
Meniscus-guided coating methods, such as zone casting, dip coating and solution shearing, are scalable laboratory models for large-area solution coating of functional materials for thin-film electronics. Unfortunately, the general lack of understanding o