JP2005123382A2005-05-12SURFACE PROTECTION SHEET AND METHOD FOR GRINDING SEMICONDUCTOR WAFER JP2006032506A2006-02-02METHOD AND DEVICE FOR PEELING SEMICONDUCTOR WAFER JP2006156679A2006-06-15SUPPORT PLATE ADHERING APPARATUS JP2007048920A2007-02-22METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE ...
efficiently stripped. Furthermore, jetting the atomized stripping solution under high pressure effectively applies the stripping solution to narrow gaps; therefore, the resist can be satisfactorily stripped without remaining. Used-stripping solution is drained via a drainpipe26from a drain hole16aof the...
ram pressure stripping, i.e. the pressure exerted by the hot and dense intracluster medium (ICM) on galaxies moving at high velocity within the cluster gravitational potential well, is a key process able to remove their interstellar medium (ISM) and quench...
in which, in general, a TFT (thin-film-transistor) and a pixel electrode (transparent electrode) are formed on one glass substrate and an alignment film is superposed thereon to cover the entire surface of the substrate, while a color filter, a transparent electrode...
1is GaAs,2is an insulation film (Si3N4),3is a step height A,4is a step height B,5is a semi-insulating GaAs substrate,6is a high-resistant buffer layer,7is an active layer,8is a source,9is a drain, and10is a recess.
JP 3320965 discloses a method for stripping TiAlN, ZrAln, HfAlN as well as Si3N4hard-material coatings. It employs alkaline solutions containing various concentrations of permanganate and dichromate ions. However, a satisfactory removal of the layers specified was not possible until relatively high ...