Our approach provides a new strategy for on-demand design of morphology and local strain in TMDs under mechanical deformation.Zhu, ShuzeJohnson, Harley T.NanoscaleZhu, S. & Johnson, H. T. Moire-templated strain patterning in transition-metal dichalcogenides and application in twisted bilayer MoS2, Nanoscale 10, 20689-...
The 2D semiconducting TMDs, such as MoS2, were first used to fabricate field effect transistors in 2011 and attracted lots of research interests because they possess a band gap [66]. The excellent mechanical properties of 2D TMDs, which fracture strains as high as 11% [67], make them promis...
in the suspended graphene45, we conclude thatF1is essentially strain-free becauseωG0agrees well with the aforementioned value of graphite and that of electrically neutralized bilayer graphene46within 0.5 cm−1corresponding to a biaxial strain less than ~0.01% (ref.30). Setting (ωG0,ω2D0) a...
Tuning magnetic anistropy by charge injection and strain in Fe/MoS2 bilayer heterostructures. C. S. Song,S. J. Gong,Z. X. Zhang,H. M. Mao. Journal of Physics D Applied Physics . 2015Song, C.; Gong, S.; Zhang, Z.; Mao, H.; Zhao, Q.; Wang, J.; Xing, H. Tuning magnetic ...
topological phase transitionspin‐orbit couplingproximity effectsBerry curvatureSobhit SinghDepartment of Physics and Astronomy West Virginia University Morgantown West Virginia USAAbdulrhman M. AlsharariDepartment of Physics and Astronomy, Nanoscale and Quantum Phenomena Institute Ohio University Athens Ohio USA...
This implies MoS2 monolayer can be a suitable semiconducting substrate for germanene adhension. Through various in-plane external strains, the opened Dirac gap of heterobilayer can be further modulated and a semiconductor-metal transition even occurs. In addition, the Germanene/MoS2 heterobilayer can ...
Herein, we have developed one two-stage chemical vapor deposition strategy based on strain engineering, enabling the controlled preparation of large-area (4 脳 6 cm 2 ) bilayer MoS2 nanostructures . Systematic characterizations indicate that compressive strain was introduced during the growth of first...
The initially degenerate E′ monolayer Raman mode is split into a doublet as a direct consequence of the strain applied to MoS2 through Van der Waals coupling at the sample-substrate interface. We observe a strong shift of the direct band gap of 48 meV/(% of strain) for the monolayer ...
strain engineeringelectric fieldDFTIn this work, we investigate band-gap tuning in bilayer MoS2 by an external electric field and by applied biaxial strain. Our calculations show that the band gaps of bilayer MoS2can be tuned by the...
C. Zeng, Strain-Dependent Electronic and Magnetic Properties of MoS2 Monolayer, Bilayer, Nanoribbons and Nanotubes, Phys. Chem. Chem. Phys., 2012, 14, 13035-13040.Lu, P.; Wu, X.; Guo, W.; Zeng, X. C. Strain-Dependent Electronic and Magnetic Properties of MoS2 Monolayer, Bilayer, ...