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Jucienė, "Drift velocity of electrons in quantum wells of selectively doped In0.5Ga0.5As/AlxIn1- xAs and In0.2Ga0.8As/AlxGa1-xAs heterostructures in high electric fields," Semiconductors, vol. 45, pp. 761-765, 2011 (Engl. Transl. of Fiz. Tekh.Poluprovodn., vol. 45, pp.778-...
抖音号:L1X2R23IP属地:安徽 最新作品发布时间:2025-01-24 18:45 🍔@无聊的玉米 私信关注 关注私信 作品6 喜欢 搜索Ta 的作品 视频 日期筛选 453 真的 真的没关系#容祖儿 #没关系 真的 真的没关系#容祖儿 #没关系 279 我以为南方不会下雪 我以为雪山只是叫雪山#男高中生#文案#新年快乐 我以为南方...
Effect of Interface Microrelief on Optical, Electrical and Photoelectric Characteristics of Heteroepitaxial AlxGa1-xAs/GaAs Structuresnot avaliableDmitruk, N.L.Borkovskaya, O.Yu.Konakova, R.V.Korovin, A.V.Mamontova, I.B.Kondratenko, O.S....
Dutta, P. G. Newman, M. Taysing-Lara, and Y. Lu, "Femtosecond studies of excitonic optical nonlinearities in GaAs/Al $_x$ Ga $_{1-x}$ As multiple quantum wells under in-plane uniaxial strain", Surface Science , vol. 305, pp.238 -242 1994...
A simple tight-binding sp3s* model, which incorporates compositional disorder as an effective potential, is used for the calculations of the electronic structures of the semiconducting alloys AlxGa1 xAs and GaPxAs1 x. Our results for various interesting quantities, including band-gap bowings and ...
InAs/GaAs quantum dotInterband transitionActivation energyReflection high-energy electron diffraction, atomic force microscopy, transmission electron microscopy, and double-crystal X-ray curves showed that hi…[ H.C. ImHanyang UnivJ.H. KimHanyang UnivD.H. Oh...