STM32G0C1 / G0B1 / G0B0是最可承担起的512K Flash的STM32,是“小封装大存储”的强力整合,特性包括: USB data + UCPD (type-C & Power Delivery) FDCAN x2 Dual-bank Flash: 固件升级,同时读写 高达8 U(S)ART (6xUSART + 2 LPUART) STM32G0B1主流微控制器基于高性能Arm®Cortex®-M0+ 32位...
在Dual bank模式下，Bank1和Bank2的切换需要特定的操作，如设置FB_MODE寄存器。如果切换操作不正确或时机...
STM32G0C1 / G0B1 / G0B0是最可承担起的512K Flash的STM32,是“小封装大存储”的强力整合,特性包括: USB data + UCPD (type-C & Power Delivery) FDCAN x2 Dual-bank Flash: 固件升级,同时读写 高达8 U(S)ART (6xUSART + 2 LPUART) STM32G0B1主流微控制器基于高性能Arm Cortex -M0+ 32位RISC...
高效 基于ARM Cortex M0+内核，64MHz主频，STM32G0有最大化的I/O数量，最佳的RAM/Flash配比，最小到...
USB / USB-C应用程序 节能应用(电池驱动) 工业设备 控制应用程序 电机控制应用程序 家用电器 家庭自动化 电动自行车 空调 特性 最大可支持512kb Flash和144kb RAM内存 Dual-bank闪光 包装从32针到100针 USB数据+ UCPD (Type-C和Power Delivery) FDCAN x2...
STMicroelectronics has expanded the STM32G0* Arm® Cortex®-M0+ microcontroller (MCU) series with more product variants and features such as dual-bank Flash, support for CAN FD and crystal-less USB Full-Speed data/host support. For budget-conscious applications, the new STM32G050 Value Lin...
G0B1CET6是一款基于ARM Cortex-M4F内核的微控制器，具有双Bank Flash存储器。在您的描述中，当擦除...
Lock the Flash back after a flash operation to leave the device in a state as close as possible to its previous state; Dual-bank flash erasure on coming STM32G0Bx/G0Cx devices seems to be different from STM32L4 API as far as I understand the reference manuals. G0 pages count above 256...
Typ Max Unit 200 260 300 380 520 650 μA 5.3.10 Flash memory characteristics Table 43. Flash memory characteristics(1) Symbol Parameter Conditions tprog tprog_row tprog_page tERASE tprog_bank tME IDD(FlashA) IDD(FlashP) 64-bit programming time Row (32 double word) programming time Page...
Two areas per bank can be selected, with 2-Kbyte granularity. • Proprietary code readout protection (PCROP): a part of the Flash memory can be protected against read and write from third parties. The protected area is execute-only: it can only be reached by the STM32 CPU as ...