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Modeling and simulation Device model and parameter extraction. To obtain the robust framework for material-process-device co-design of submicron IGZO FETs, we performed device modeling and incorporated it into a TCAD simula- tion. First, as is shown in Fig. 4, the BG FET and DG FET...
Although it is possible to obtain these feedstocks in an extremely high purity (e.g., 99.99% mol/mol) [31,32], we chose a more conservative scenario, which also allows a proper simulation of inert material accumulation in the plant. As pressure has a significant influence on the ...
3.2.1. Design Target Conception In order to obtain 52Mn, a natural chromium target was irradiated by a proton beam. Once irradiated, the target was then chemically treated to isolate 52Mn from Cr. However, the preparation of this target requires special attention. No commercial Cr foil exists...