Reducing metal voids in a metallization layer stac 专利内容由知识产权出版社提供 专利名称:Reducing metal voids in a metallization layer stack of a semiconductor device by providing a dielectric barrier layer 发明人:Holger Schuehrer,Juergen Boemmels 申请号:US12565323 申请日:20090923 公开号:US08097536B2...
Copper-containing C4 ball-limiting metallurgy stac 专利名称：Copper-containing C4 ball-limiting metallurgy stack for enhanced reliability of packaged structures and method of making same 发明人：Madhav Datta,Dave Emory,Subhash M.Joshi,Susanne Menezes,Doowon Suh 申请号：US09961034 申请日：20010921 公开号...