ST C27是 稳压二极管。稳压二极管，英文名称Zener diode，又叫齐纳二极管。利用pn结反向击穿状态，其电流可在很大范围内变化而电压基本不变的现象，制成的起稳压作用的二极管。 此二极管是一种直到临界反向击穿电压前都具有很高电阻的半导体器件.在这临界击穿点上，反向电阻降低到一个很小的数值，在这个低...
(Vcesat) 3 2 3 OFF LOSSES INCLUDE TAIL CURRENT 1 2 1 LOSSES INCLUDE DIODE RECOVERY TO-220 TO-220FP ENERGY LOWER CRES/CIES RATIO HIGH FREQUENCY OPERATION UP TO 70 3 KHz 1 2 VERY SOFT ULTRA FAST RECOVERY ANTI D PAK PARALLEL DIODE NEW GENERATION PRODUCTS WITH Figure 2: Internal Schematic...
PAM13ST2305 概述 ULTRA LOW CAPACITANCE STEERING DIODE/TVS ARRAY 超低电容控向二极管/ TVS阵列 瞬态抑制器 PAM13ST2305 规格参数 生命周期: Active 包装说明: R-PDSO-G6 针数: 6 Reach Compliance Code: compliant ECCN代码: EAR99 HTS代码: 8541.10.00.50 风险等级: 5.77 Is Samacsys: N 最小击穿电压: ...
Per diode Per device 1530A I FSM Surge non repetitive forward current tp = 10 ms sinusoidal 140A I RSM Non repetitive peak reverse current tp = 20 µs square 7A T stg Storage temperature range -65 +175°C Tj Maximum operating junction temperature +175 °C ABSOLUTE RATINGS (limiting ...
3.3 V, 5 V, 15 V CMOS/TTL inputs comparators with hysteresis and pull down / pull up resistors ■Undervoltage lockout ■Internal bootstrap diode ■Interlocking function ■Shutdown function ■Comparator for fault protection against overtemperature and overcurrent ■DBC substrate leading to low ...
包装说明: R-PDSO-G4 Reach Compliance Code: compliant ECCN代码: EAR99 HTS代码: 8541.10.00.80 风险等级: 5.74 Is Samacsys: N 其他特性: UL RECOGNIZED 最小击穿电压: 600 V 配置: BRIDGE, 4 ELEMENTS 二极管元件材料: SILICON 二极管类型: BRIDGE RECTIFIER DIODE 最大正向电压 (VF): 1.1 V JESD-30 ...
Type Designator: STGFL6NC60DI Type: IGBT + Anti-Parallel Diode Marking Code: GFL6NC60DI Type of IGBT Channel: N Pcⓘ - Maximum Power Dissipation: 22 W |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V ...
diode current slope. Added Figure 25: Collector current vs. switching frequency. Updated Section 4: Package information. Minor text changes. Text edits throughout document. In document, added new order code STGWA60H65DFB in TO-247 long leads package, with accompanying information and data. In ...
(sat)) Low CRES / CIES ratio (no cross-conduction susceptibility) Short-circuit withstand time 10 μs IGBT co-packaged with ultrafast free- wheeling diode Applications High frequency inverters Motor drives Description These devices are very fast IGBTs developed using ...
STTH2002C High efficiency ultrafast diode Features ■Suited for SMPS ■Low losses ■Low forward and reverse recovery times ■Low leakage current ■High junction temperature ■ Insulated package: TO-220FPAB Description Dual center tap rectifier suited for switch mode power supplies and high frequency ...