开启电压Vgs(th) Gate-Source Threshold Voltage0.9~1.5V 耗散功率Pd Power Dissipation200mW/0.2W Description & ApplicationsTOSHIBA Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications ●Suitable for high-density mounting due to compact package ●High...
SSM6N15FU Complex FET 30V 100mA/0.1A SOT-363/SC70-6/UF6 marking DP high-speed switchModel:SSM6N15FU Mark / screen / code / typing:DP Manufacturer: Date Code:11+ROHS 11+ROHS Package:SOT-363/SC70-6/UF6 Standard Package:3000 Min Order:10...
Become a supplierSSM3K09FU SOT323 screen-printed DJ high-speed switch N-channel enhanced FET electronic components BOM list chip IC quotation No reviews yet Shenzhen Hainayu Electronics Co., Ltd.Multispecialty supplier4 yrsCN Previous slideNext slide Previous slideNext slideKey attributes Other att...
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid...
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Toshiba Semiconductor SSM3J304T 238Kb / 6P Field-Effect Transistor Silicon P-Channel MOS Type Power Management Switch Applications High-Speed Switching Applications SSM3J109TU 201Kb / 5P Field-Effect Transistor Silicon P-Channel MOS Type Power Management Switch Applications High-Speed Switching Applic...
SSM3J16FV MOSFET P-Channel -30V -100mA/0.1A 8ohm SOT-523 marking DT high-speed switch analog switch low on-resistanceInventory:976800 Min Order:100 ParametersRelated model ×Parameters: Model:SSM3J16FV Manufacturer:HUABAN Date Code:11+ROHS 12+rohs Standard Package:8000 Min Order:100 Mark/...
开启电压Vgs(th) Gate-Source Threshold Voltage0.5~1.1V 耗散功率Pd Power Dissipation500mW/0.5W Description & ApplicationsTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) High Speed Switching Applications • Optimum for high-density mounting in small packages • Low on-resistanc...
开启电压Vgs(th) Gate-Source Threshold Voltage1.1~1.8V 耗散功率Pd Power Dissipation300mW/0.3W Description & ApplicationsTOSHIBA Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications • Small package • Low Drain-Source ON resistance. : Ron = 0.7 Ω (max) (@VGS ...
最大漏极电流Id Drain Current-650mA/-0.65A 源漏极导通电阻Rds Drain-Source On-State Resistance0.4Ω @-300mA,-4V 开启电压Vgs(th) Gate-Source Threshold Voltage0.6-1.1V 耗散功率Pd Power Dissipation300mW/0.3W Description & ApplicationsPower Management Switch High Speed Switching Applications Small pack...