自旋场效应晶体管(Spin Field Effect Transistor, Spin FET)是一种前沿的微电子技术。它不仅依赖于电子的电荷性质,而且还利用了电子的自旋性质。依据量子力学理论,电子不仅拥有电荷性质,还具备一个较少为人知的自旋特性,即电子具有固有的自旋角动量。因此,在外加磁场中,除了受到洛伦兹力的作用,运动中的电子还能通过...
The invention discloses a spin field-effect tube (Spin-FET) with a linear light dope structure. A transport model which is suitable for the linear doped Spin-FET is constructed based on the quantum mechanics nonequilibrium green function theoretical framework and through the self-consistent solving...
Spin precesionDatta–Das transistorThis work is devoted to the study of spin-polarized transport in semiconductors as a new type of current transmission in semiconductor devices; this allows us to elaborate a 2deg model for the so-called spin-polarized field effect transistor (spin-FET). Spin-...
Spin FET 专利名称：Spin FET 发明人：井口 智明,斉藤 好昭,杉山 英行申请号：JP2006244881 申请日：20060908 公开号：JP4444257B2 公开日：20100331 专利内容由知识产权出版社提供 摘要：A spin memory includes a magneto-resistance element having a first ferromagnetic layer in which a magnetization direction...
spin FET 提出了这么久，为什么还没实现？主要是两个问题导致其开关比上不去。一是铁磁金属/非磁...
transistor.) 不像original spin FET, 这篇实验的文章使用了quantum point contacts来inject和detect spin...
A spin FET according to an example of the present invention includes a magnetic pinned layer whose magnetization direction is fixed, a magnetic free layer whose magnetization direction is changed, a channel between the magnetic pinned layer and the magnetic free layer, a gate electrode provided on...
SPIN FET AND SPIN MEMORY 优质文献 相似文献Magnetoelectric Spin-FET for Memory, Logic, and Amplifier Applications We propose a ballistic magneto-electric device that permits conductance modulation with both electric and magnetic fields applied perpendicular to its curr... ...
An spin-injection FET according to an embodiment of the invention includes a first ferromagnetic body whose magnetization direction is fixed, a second ferromagnetic body whose magnetization direction
专利名称:Spin-injection FET 发明人:Yoshiaki Saito,Hideyuki Sugiyama,Tomoaki I no k uchi 申请号:US11255101 申请日:20051021 公开号:US07200037B2 公开日:200704 03 专利附图: 摘要:An spin-injection FET includes a first ferromagnetic body whose magnetization direction is fixed, a second ferromagnetic ...