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2. The imaging element according to claim 1, wherein the semiconductor substrate further includes an amplifier transistor and a floating diffusion layer on the other surface side, and the through electrode is electrically coupled to at least one of the amplifier transistor or the floating diffusion...
The through electrode 34 has a function as a connector between the organic photoelectric converter 20 and both the gate Gamp of the amplifier transistor AMP and the floating diffusion FD1, and serves as a transmission path of electric charges (herein, electrons) generated in the organic ...
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The through electrode 63 has a function as a connector between the organic photoelectric converter 11G and both the gate Gamp of the amplifier transistor AMP and the floating diffusion FD3, and serves as a transmission path of charges (herein, electrons) generated in the organic photoelectric ...
a tuner. Where judgment is made in Step S36that the control object device is not a tuner (for example, an amplifier is included here), the processing of the control object device monitoring function section40proceeds to Step S13of FIG. 4, and where judgment is made that the device is no...
Further, Patent document 3 discloses a semiconductor integrated circuit device including a MOS transistor, in which operation can be performed with low supply voltage in the active mode and the power consumption due to leaked electric current can be suppressed in the standby mode. Furthermore, Pate...