5) liquid-phase crystallization 液相晶化法 1. SAPO-34 molecular sieve was synthesized by liquid-phase crystallization using morpholine(Mor) and morpholine-tetraethylammonium hydroxide(Mor-TEAOH) as templates. 分别以吗啉(Mor)和吗啉-四乙基氢氧化铵(Mor-TEAOH)为模板剂,采用液相晶化法合成SAPO-34分子筛...
网络固相晶化 网络释义 1. 固相晶化 ... ) solid phase crystallization 固相晶化 )solid-phase crystallization固相晶化) Crystal phase of catalyst 催化剂晶相 ... www.dictall.com|基于 1 个网页 例句
Herein, GeO2 preparation and Sn addition are combined in the advanced low‐temperature (375°C) solid‐phase crystallization of Ge layers that have been recently developed. The GeO2 underlayer works effectively at a low Sn composition (< 4%), enlarging the grain size by a magnification of ≈...
A new crystallization method for amorphous silicon, called selective area heating (SAH), was proposed. The purpose of SAH is to improve the reliability of amorphous silicon films with extremely low thermal budgets to the glass substrate. The crystallization time shortened from that of the ...
Solid-phase Crystallization of Amorphous Silicon Films by Rapid Thermal Annealing[J].半导体光子学与技术(英文版) 2005.Solid-phase Crystallization of Amorphous Silicon Films by Rapid Thermal Annealing[J]. JIN Rui-min, LU Jing-xiao, LI Rui, WANG Hai-yan, FENG Tuan-hui(Lab. of Mater. Phys. ...
D. Louer, A. Hadjaj, " Effect of starting amorphous structure on the solid-phaseMohammed-Brahim T, Sarret M, Briand D, Kis-Sion K, Haji L, Bonnaud O, Louer D and Hadjaj A 1997 Effect of starting amorphous structure on the solid-phase crystallization of silicon Phil. Mag. B 76 193...
摘要: Optical Investigations of Solid-Phase Crystallization (SPC) Properties of Si_Ge_X YAMAGUCHI Shinya , SUGII Nobuyuki , NAKAGAWA Kiyokazu , MIYAO Masanobu Extended abstracts of the ... Conference on Solid State Devices and Materials 1999, 474-475, 1999-09-20...
Multi-quantum wells (MQW) with nanometer thick crystalline Si layers are considered among the promising light absorbers for application in the next generation of photovoltaic cells. Proper crystallization of the initially amorphous Si (a-Si) layers in such MQW presents a challenge. Recently it was ...
The process of plasma enhanced chemical vapor deposition is quantified for silane containing various types of dilutants, thereby allowing deposition temperature, type of dilutant, type of plasma and other parameters to be controlled to yield the desired crystallization grain size at the desired ...
1) solid phase epitaxial crystallization 固相外延结晶2) solid phase epitaxy 固相外延 1. Preparation of Si_(1-x-y)Ge_xC_y semiconductor films on Si by ion implantation and solid phase epitaxy; 离子注入和固相外延制备Si_(1-x-y)Ge_xC_y半导体薄膜 2. Then the two kinds of samples were ...