作用于空间军事用途的抗辐射集成电路。由于发现薄膜SOI MOSFET具有极好的等比例缩小的性质，使得SOI技术在深亚微米VLSI中的应用中具有极大吸引力。目前SOI技术走向商业应用阶段，特别是应用在低压，低功耗电路[1-2〕，高频微波电路以及耐高温抗辐射电路[3]等。本文通过比较SOI和体硅器件在寄生电容，闭锁效应，热载流子...
The initiative is well positioned for success, considering GF’s track record of positive private-public partnerships to grow ecosystems around its fabs in Germany and New York.” Dan Hutcheson, CEO and Chairman of VLSI Research “GF’s FDX offerings bring together the best i...
“Process simulation of trench gate and plate and trench drain SOI nLDMOS with TCAD tools”, Semiconductor Electronics, 2008. ICSE 2008. IEEE International Conference on 25-27 Nov. 2008 pp. 92&95 K. Modzelewski, R. Chintala, H. Moolamalla, S. Parke, D. Hackler, ...
In: Proceedings of VLSI 2012 Symposium on Technology (VLSIT), Honolulu, 2012. 131–132 4 Dennard R H, Gaensslen F H, Rideout V L, et al. Design of ion-implanted MOSFET's with very small physical dimensions. IEEE J Solid-State Circuits, 1974, 9: 256–268 5 Wann H, Ko P K, ...
1,J.P。Collinge,SOI Technology:Materials t VLSI,Kluwer Academic Pub.(1991) 2,SOI材料的发展历史、应用现状与发展新趋势(上)上海新傲科技有限公司陈猛王一波《中国集成电路》(2007) 3,SOI—-二十一世纪的硅集成技术中国科学院电子研究所伍志刚凌荣唐《微电子学》(2001) 4,SOI-—二十一世纪的微电子技术...
The emergence of spin electronics in data storage. Nature Materials, 2007. [10] Magarshack P. Breakthrough technologies and reference designs for new IoT applications. Vlsi Technology, IEEE, 2015. [11] Gallagher W J, Parkin S S P. Development of the magnetic tunnel junction MRAM at IBM:...
因此, 加大对SOI新技术的研究投入具有非常重要的战略意义 参考文献1,J.P.Collinge, SOI Technology:Materials t VLSI,Kluwer Academic Pub.(1991) 2,SOI材料的发展历史、应用现状与发展新趋势(上) 上海新傲科技有限公司 陈猛 王一波 中国集成电路 (2007)3,SOI-二十一世纪的硅集成技术 中国科学院电子研究所 伍...
1,J.P.Collinge,SOI Technology:Materials t VLSI,Kluwer Academic Pub.(1991) 2,SOI材料的发展历史、应用现状与发展新趋势(上)上海新傲科技有限公司陈猛王一波《中国集成电路》(2007) 3,SOI--二十一世纪的硅集成技术中国科学院电子研究所伍志刚凌荣唐《微电子学》(2001) 4,SOI--二十一世纪的微电子技术中国...
VLSILOW-POWERHIGH-PERFORMANCECIRCUIT TECHNIQUESQUANTITATIVE COMPARISON65 NM SOI-TECHNOLOGYThe reduction of active and passive power dissipation is one of the most important challenges in modern chip design. High-performance microprocessors are reaching the technical packaging and cooling limits, whereas power...
The paper considers the VLSI manufacturing process development from the 40 nm to 10 nm technology node. It is demonstrated that starting from the 32/28 nm node further scaling is possible only through transistor design changes to prevent high drain-source leakage currents. The FinFET structure ...