G on =1ΩR G off =1Ω di/dt on =4400A/µs di/dt off =1800A/µs T j =150°C 175ns t r T j =150°C 38ns E on T j =150°C 18.7mJ t d(off)T j =150°C 400ns t f T j =150°C 78ns E off T j =150°C 14.1 mJ R th(j-c)per IGBT 0.2 K/W ...
G on =1ΩR G off =1Ω di/dt on =3400A/µs di/dt off =1750A/µs T j =150°C 180ns t r T j =150°C 42ns E on T j =150°C 19.2mJ t d(off)T j =150°C 410ns t f T j =150°C 72ns E off T j =150°C 15.8 mJ R th(j-c)per IGBT 0.19 K/W ...
赛米控丹佛斯 SEMITRANS IGBT模块 SKM150GAR12T4 数据表 1 ® 2 GAR Fast IGBT4 Modules SKM150GAR12T4 Features •IGBT4 = 4. generation fast trench IGBT (Infineon)•CAL4 = Soft switching 4. generation CAL-diode •Isolated copper baseplate using DBC technology (Direct Bonded Copper) •...
10µs T j -40...175°C Inverse diode I F T j =175°C T c =25°C 189A T c =80°C 141A I Fnom 150 A I FRM I FRM = 3xI Fnom 450A I FSM t p =10ms, sin 180°, T j =25°C 900A T j -40 (175)°C Freewheeling diode I F T j =175°C T c =25°C ...