研究了HfN/HfO2高K栅结构p型金属-氧化物-半导体(MOS)晶体管(MOSFET)中,负偏置-温度应力引起的阈值电压不稳定性(NBTI)特征.HfN/HfO2高K栅结构的等效氧化层厚度(EOT)为1... 萨宁,康晋锋,杨红,... - 《物理学报》 被引量: 5发表: 2006年 HfO_2高介电常数栅介质薄膜的制备及其电学性能的研究 伴随着CMOS...
Breakdown spots of ultra-thin (EOT Vandervorst, “Breakdown spots of ultra-thin (EOT < 1.5 nm) HfO2/SiO2 stacks observed with enhanced C-AFM,” Microelectron. Reliability. 45, 811, 2005. :X. Blasco, M. Nafría, X. Aymerich, J. Pétry, W. Vandervorst, ... X Blasco,M Nafr??A,...
Lee, M. Chan, "Electrical stress-induced charge carrier generation/trapping related degradation of HfAlO/SiO2 and HfO2/SiO2 gate dielectric stacks", Journal of Applied Physics, 2009(105), 124507-124507-8.P. Samanta, C. Zhu and M. Chan, "Comparison of electrical stress-induced charge carrier...
Atomic Layer Deposition of HfO2 Thin Films on Ultrathin SiO2 Formed by Remote Plasma Oxidation An ultrathin SiO2 layer was grown on a H-terminated Si substrate by using remote plasma oxidation. The subsequent HfO2 deposition on the ultrathin SiO2 was... S Kim,S Woo,H Kim,... - Journal-...
In an effort to improve performance on Si and SiGe devices, multilayered oxides (SiO2/Ta2O5, Ta2O5/ZrO2, ZrO2/HfO2, SiO2/ZrO2, etc.) have been studied with the goal of lowering EOT, reducing leakage current, increasing interfacial layer stability, suppressing dopant diffusion, and improving ...
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et al. Si emission from the SiO2∕Si interface during the growth of SiO2 in the HfO2∕SiO2∕Si structure. Appl. Phys. Lett. 88, 153516 (2006). 15. Watanabe, H. Roughness at ZrO2/Si interfaces induced by accelerated oxidation due to the metal oxide overlayer. Appl. Phys. Lett. 83, ...
On the contrary, at a given stress voltage, the threshold voltage degradation and stress-induced leakage current degradation in HfAlO samples are higher, indicating shorter device lifetime compared to the HfO2 samples of same EOT. In addition, the mechanism of charge trapping in the oxide as ...
In this study, the spatial and energetic distributions of electrons trapped within a SiO2/HfO2 dual layer gate stack (EOT = 1 nm) of fully processed high-k/metal gate nFETs were investigated by discharging-sweep mode amplitude charge pumping (DSACP). DSACP enables the separate energy ...
Cristoloveanu, "A systematic investigation of work function in advanced metal gate-HfO2-SiO2 structures with bevel oxide", Solid-State Electron. , vol. 51, no. 11–12, pp. 1515-1522, 2007A. Kuriyama, J. Mitard, O. Faynot, L. Bre´vard, L. Clerc, A. Tozzo, V. Vidal, S. De...