研究了HfN/HfO2高K栅结构p型金属-氧化物-半导体(MOS)晶体管(MOSFET)中,负偏置-温度应力引起的阈值电压不稳定性(NBTI)特征.HfN/HfO2高K栅结构的等效氧化层厚度(EOT)为1... 萨宁,康晋锋,杨红,... - 《物理学报》 被引量: 5发表: 2006年 HfO_2高介电常数栅介质薄膜的制备及其电学性能的研究 伴随着CMOS...
Breakdown spots of ultra-thin (EOT<1.5nm) HfO2/SiO2 stacks observed with enhanced—CAFM In this work, the (gate) current versus (gate) voltage ( I鈥 V) characteristics and the dielectric breakdown (BD) of an ultra-thin HfO 2/SiO 2 stack is studied by enhanced conductive atomic force ...
In this study, the spatial and energetic distributions of electrons trapped within a SiO 2/HfO 2 dual layer gate stack (EOT=1nm) of fully processed high-k/metal gate nFETs were investigated by discharging-sweep mode amplitude charge pumping (DSACP). DSACP enables the separate energy ...
具有HfN/HfO2栅结构的p型MOSFET中的负偏置-温度不稳定性研究 研究了HfN/HfO2高K栅结构p型金属-氧化物-半导体(MOS)晶体管(MOSFET)中,负偏置-温度应力引起的阈值电压不稳定性(NBTI)特征.HfN/HfO2高K栅结构的等效氧化层厚度(EOT)为1... 萨宁,康晋锋,杨红,... - 《物理学报》 被引量: 5发表: 2006年 Neg...
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SiO2 interlayer and the diffusion of La and Hf atoms to the SiO2 interlayer, were achieved by a 1 nm thick La2O3 capping layer using a La(fAMD)3 precursor, while a relatively smaller V fb and EOT of 0.7 V and 1.27 nm were obtained from the noncap TiN/HfO2/SiO2/Si MOSCAP sample....
et al. Si emission from the SiO2∕Si interface during the growth of SiO2 in the HfO2∕SiO2∕Si structure. Appl. Phys. Lett. 88, 153516 (2006). 15. Watanabe, H. Roughness at ZrO2/Si interfaces induced by accelerated oxidation due to the metal oxide overlayer. Appl. Phys. Lett. 83, ...
We compare charge carrier generation/trapping related degradation in control oxide (SiO2) and HfO2/SiO2 stack of an identical equivalent-oxide-thickness (EOT) during constant gate voltage stress of n-type metal-oxide-semiconductor (nMOS) capacitors. Irrespective of these two dielectrics, the kinetics...
On the contrary, at a given stress voltage, the threshold voltage degradation and stress-induced leakage current degradation in HfAlO samples are higher, indicating shorter device lifetime compared to the HfO2 samples of same EOT. In addition, the mechanism of charge trapping in the oxide as ...
Mansun ChanElsevier B.V.Microelectronic EngineeringCharge carrier generation/trapping mechanisms in HfO 2 /SiO 2 stack[J] . Piyas Samanta,Chunxiang Zhu,Mansun Chan.Microelectronic Engineering . 2007 (9)Charge carrier generation/trapping mechanisms in HfO2/SiO2 stack. Samanta P,Zhu C,Chan M. ...