Single crystal growth of lithium hydrogen tartrate by gel encapsulation technique is reported and described.Crystal system, space group and cell parameters are worked out.It is shown that the crystals exhibit indirect allowed transition with an optical band gap of ~4.83eV.Dielectric characteristics are...
Single crystal growth methodA method of growing a single crystal of semiconductor using a CZ growth technique, having a step (0 < t < t1) wherein a single crystal of semiconductor is pulled while a source material is supplied continuously to maintain a constant amount of semiconductor melt, ...
D. Johnson2, R. Coldea2, P. Gegenwart1 & A. Jesche1 Thorough mixing of the starting materials is the first step of a crystal growth procedure. This holds true for almost any standard technique, whereas the intentional separation of educts is considered to be restricted to a ...
crystal orientationdislocationsGe-Si alloysinfrared spectralight transmissionsegregationsemiconductor growthsemiconductor materialsstacking faults(111)- and (100)-Si Ge single crystals (0 < x < 0.1) with diameters of up to 48 mm were grown by Czochralski technique using a crystal puller with resistance...
GROWING TECHNIQUE OF SINGLE-CRYSTAL SILICON FROM MELT FIELD: metallurgy, crystals.;SUBSTANCE: invention concerns field of semiconducting materials metallurgy and can be used mainly at receiving of substances crystals with fusion temperature, increasing quartz softening temperature, for inst... AO Sergeevic...
摘要: Summary This chapter contains sections titled: The Double-Infusion Technique Single Crystals of Rare Earth Transition Element Cyanides Ln[M(CN) 6 .nH 2 O Silver(I)Periodate Ag 2 H 3 IO 6 and Ammonium Periodate (NH 4 ) 2 H 3 IO 6...
Single-crystal growth of the ternary BaFe$_2$As$_2$ phase using the vertical Bridgman technique Ternary Ba-Fe-As system has been studied to determine a primary solidification field of the BaFeAsphase. We found that the BaFeAsphase most likely melts co... R Morinaga,K Matan,HS Suzuki,.....
GROWING TECHNIQUE OF SINGLE-CRYSTAL SILICON FROM MELT FIELD: metallurgy, crystals.;SUBSTANCE: invention concerns field of semiconducting materials metallurgy and can be used mainly at receiving of substances crystals with fusion temperature, increasing quartz softening temperature, for inst... AO Sergeevic...
Thorough mixing of the starting materials is the first step of a crystal growth procedure. This holds true for almost any standard technique, whereas the intentional separation of educts is considered to be restricted to a very limited number of cases. Here we show that single crystals ofα-Li...
摘要: PURPOSE: To provide the title unit and method, i.e., vertical Bridgman technique or vertical gradient freezing technique, enabling the heat flow from the bottom of a vessel to be controlled, also capable of easily controlling the design of solid/liquid interface....