A nitrogen rich silicon bonding structure near the interface of SiN/Si was observed, indicating that oxygen impurities in the SiN film were induced as the interface transformation. These variations in the interlayer properties led the deterioration of the passivation properties such as formation of ...
Homepage > News > Knowledge Center News 提醒x 您的浏览器版本过低或该浏览器不支持,可能导致网站不能正常运行 为了您能正常使用网站功能,建议使用一下浏览器: Google Chrome(推荐)、火狐浏览器(Firefox)、IE10、IE11、360安全浏览器(极速模式)、360极速浏览器、搜狗高速浏览器(高速模式)、遨游浏览器、Apple Saf...
The structure, stability and bonding nature of these clusters bound to noble gas (Ng) atoms are studied at the MP2/def2-QZVPPD level of theory. Positive Be Ng bond dissociation energy, which gradually increases down Group 18 from He to Rn, indicates the bound nature of Ng atoms. All ...
The results show that the interface bonding properties of TiAlSiN/WC-Co can be improved when the matrix is doped with the main surface of intrinsic graphene, and the interface bonding property of TiAlSiNN/WC-Co can be improved when the coating and coating/matrix are doped separately with the...
Si–H bondingrefractive indexThe effect of hydrogen capping of SiN(Si-rich)/SiN(N-rich) stacks for n -type c-Si solar cells was investigated. Use of a passivation layer consisting of Si-rich SiN with a refractive index ( n ) of 2.7 and N-rich SiN with a refractive index of 2.1 ...
1a there are also other peaks which belong to Fe, Fe2N, and FeTi through Ti and N bonding to the Fe atoms of the substrate. The second layer, TiAlN, had three crystal structures; c-TiN with (111), (220), and (311) peaks, h-TiAlN with (105), (106), (202), and (206) ...
The increased number of Ti-N bonds at the interface, together with the resulting polarization, strengthens interfacial bonding. In contrast, overlayers of Si and, even more so, metallic Ti weaken the interface by minimizing the valence band energy difference between the two phases. A model is ...
The dehydrocurvularin inhibited p97 by covalently bonding to Cys522 (12, Fig. 4E) in a dose-dependent manner with an IC50 of 15.3 ± 9.9 μM, which caused the p97-dependent accumulation of polyubiqutinated substrates in cellular assay. The chlorinated variant 4,6-chlorinated der...
This way, the energy required to release the N-terminal helix is increased by the contribution of this salt bridge. In fact, the StnII mutant A8D, which can form the salt bridge, had its hemolytic activity reduced to that of StnI [120]. Meanwhile, the reverse StnI mutant, D9A, ...
13 The amazing world of self‑organized Ge quantum dots for Si photonics on SiN platforms Page 5 of 14 126 Fig. 2 a STEM micrograph and corresponding b Energy-Dispersive Spectroscopy (EDS) maps of elemental Ge (green), N (red), O (pink), and Si (blue) of ...