Silicon-based materials and devices. In: Nalwa HS, editor. Properties and devices, vol. 2. Academic Press; 2001. p. 123-92.Nalwa, H. S. 2001. Silicon-based material and devices. Academic Press, San Diego, Calif. London.D.J. Lockwood, in Silicon-Based Materials and Devices, edited by...
Volume 1 Optical, Structural, And Electrical Properties of Amorphous Silicon Carbide Films (W. K. Choi) Silicon Carbon Nitride: A New Wideband Gap Material (L. C. Chen, K. H. Chen, J-J. Wu, D. M. Bhusari, and M. C. Lin) Amorphous Silica (Minoru Tomozawa) Gas Phase and Surface...
is a comprehensive guide to MEMS materials, technologies, and manufacturing that examines the state-of-the-art with a particular emphasis on silicon as the most important starting material used in MEMS. The book explains the fundamentals, properties (mechanical, electrostatic, optical, etc.), materi...
Silicon[/search]http://www.namipan.com/d/7aba7d808cd9985e610a6de6f55df71e8a4c172ec198f400 ...
That is, we introduce some key technologies; (a) all-optical switching in a Si nanowire waveguide, (b) a Si waveguide polarization rotator, (c) material synthesis and waveguide formation of rare earth-doped SiOx thin-films for Si-based light emitters, and (d) a technique for fabricating ...
engineers studying advanced and state-of-the-art micro- and nano-electronic semiconductor devices and circuits. Adopting an interdisciplinary approach, it combines perspectives from e.g. material science, defect engineering, device processing, defect and device characterization, and device physics and ...
THE STUDY OF WATER-BASED SLURRY FOR WAFER SLICING AND THE TOTALLY RECYCLING OF MATERIAL IN SLICING PROCESS The wire-sawing is the standard procedure in silicon wafer producing. The stainless steel wire with silicon carbine (SiC) particles are widely used in the ... Teng-Yu Wang,Cheng-Yao Che...
The third aspect in this thesis is to report on the preparation of RGO-stabilized SiNPs, a sandwich-typed composite material (Si@RGO). As a result, good battery performance of Si@RGO was obtained, 1074 mAh·g-at the 5th cycle and 900 mAh·gat the 100th cycle with a capacity retention...
The present invention is used to form a high-quality III-V material on the silicon-based base (10). 展开 收藏 引用 批量引用 报错 分享 全部来源 求助全文 掌桥科研 相似文献Method for Self-Assembly of Substrates and Devices Obtained Thereof A method for defining regions with different surface ...