The measurements of the specific heat of silicon were carried out using the DSC method. The single-crystal silicon, containing 5.5x10[sup17] cm[sup-3] of oxygen, was the subject of our study. The measurement error was 卤5%. The temperature range of the measurements was 350-770 K. The ...
Specific Heat Capacity : 703 J /Kg /K Dielectric Constant : 13 at 10 GHz Youngs Modulus (E) : 131 GPa Shear Modulus (G) : 79.9 GPa Bulk Modulus (K) : 102 GPa Elastic Coefficients : C11=167; C12=65; C44=80 Apparent Elastic Limit : 124.1MPa (18000 psi) Poisson Ratio : 0.266 So...
specific heat of solids/ amorphous Si2 to 50Ksemiconductorsheat capacityAC calorimetry techniqueDebye temperatureThe heat capacity of amorphous silicon has been measured between 2 and 50 K using an a.c. calorimetry technique. A comparison with heat capacity measurements of crystalline silicon shows a ...
Density, g/ccYoung’s Modulus, GPaFlexural Yield Strength, MPaCTE, ⊥ orient μm/m-KCTE, ∥ orient μm/m-KThermal Conductivity, ⊥ orient W/m-KThermal Conductivity, ∥ orient W/m-KSpecific Heat Cap, J/g-°COpen porosity %SiC loading vol % Schunk FU2952a [8] 2.0 25 65 – – ...
Specific heat and thermal conductivity of low-stress amorphous Si–N membranes We present values of the specific heat and thermal conductivity from 3–300 K of low-stress amorphous silicon-nitride thin-films determined from measuremen... BL Zink,F Hellman - 《Solid State Communications》 被引量...
The specific heat of pure and hydrogenated amorphous silicon. At low temperature, amorphous materials have low energy excitations that result in a heat capacity that is in excess of the Debye heat capacity calculated ... DR Queen - University of California, Berkeley. 被引量: 0发表: 2011年 ...
Specific Heat Capacity KJ/kg.K 700 Electrical Properties Dielectric Strength KV/mm 1 Dielectric Constant er Volume Resistivity at 20°C Ω.cm 1.0X10(12) Application industry: Machinery, electronic, semiconductor, chemical, petroleum, smelt. Specific applicat...
Radiative cooling curves of nickel, zirconium, and silicon melts that were obtained using the high-temperature, high-vacuum electrostatic levitator (HTHVESL) have been analyzed to determine the ratio between the constant-pressure specific heat and the hemispherical total emissivity,c p(T)/∈T(T)....
whereρis density,Cpis the specific heat capacity at constant pressure, andkis thermal conductivity. When considering CW illumination that the temperature reaches a steady state, the equation converges into Poisson’s equationk∇2T = Q. ...
Fragmentary investigations of the heat capacity and of the thermal expansion coefficient of single crystals of high-purity silicon are reported. The result... VM Glazov,AS Pashinkin - 《High Temperature》 被引量: 55发表: 2001年 Specific Heat of High Purity Iron by a Pulse Heating Method A dy...