The etch stop layer 104b may also serve as a barrier layer, buffer layer, and/or template layer. The etch stop layer 104b may include silicon-rich silicon nitride.CHUNG WONSUKZEE STEVESASAGAWA TERUO
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专利名称：SILICON-RICH SILICON NITRIDES AS ETCH STOP IN MEMS MANUFACTURE 发明人：Wonsuk Chung,Steve Zee,Teruo Sasagawa 申请号：US12128469 申请日：20080528 公开号：US20080226929A1 公开日：20080918 专利内容由知识产权出版社提供 专利附图：摘要：The fabrication of a MEMS device such as an ...
The etch stop 104b may reduce undesirable over-etching of the sacrificial layer and the electrode 14a, 14b, 14c. The etch stop layer 104b may also serve as a barrier layer, buffer layer, and/or template layer. The etch stop layer 104b may include silicon-rich silicon nitride....
A. Gritsenko, N. D. Dikovskaya, B. N, Zaitsev, K. P. Mogilnicov, V. M. Osadchii, S. P. Sinitsa and F. L. Edelman, "Strucutre, optical and electrical properties of silicon-rich silicon nitride films" 7"hin Solid Fi/rns (Switzerland), Vol. 32, pp. 339- 342, 1976....
Silicon nitride, Si3N4, from UniversityWafer.com is often used as an insulator and chemical barrier in manufacturing integrated circuits. Silicon Nitride electrically isolate different structures and can be used as an etch mask in bulk micromachining. S
To understand the electron energy loss mechanism in Si-rich silicon nitride, the influence of the Si/N ratio, the positions of the access Si atoms, and H in and on the surface of the ELF have been investigated. It has been found that all defects, such as dangling bonds in the bulk ...
专利名称:SILICON-RICH LOW-HYDROGEN CONTENT SILICON NITRIDE FILM 发明人:Jason B. Taylor,Chiliang Chen 申请号:US1174 834 9 申请日:20070514 公开号:US20080286984 A1 公开日:20081120 专利附图: 摘要:In one embodiment, a method for forming a silicon nitride film is provided. The method includes ...
The attempt to use silicon nitride ceramics in turbomachinery has resulted in a rich technology base on the processing, fabrication, and properties of this family of ceramics. Sintering of silicon nitride is very difficult because the diffusivities are extremely low and the retardation effects of ...
In one embodiment, a method for forming a silicon nitride film is provided. The method includes providing a plasma-enhanced chemical vapor deposition (PECVD) reactor with a semiconductor substrate therein; flowing a gas mixture consisting of silane and nitrogen into the PECVD reactor; and forming ...