The use of coherent radiation from undulator beamlines has been used to directly measure the real and imaginary parts of the index of refraction of several metals1. Here we extend the same interferometric technique to slightly higher energies, and measure the indices of refraction of silicon and ...
Silicon carbideis a semiconductor that is high in refraction and has excellent thermal conductivity. It also has low tensile and compressive stress. Its refracting power is determined by its crystal shape and thickness. The refractive index of SoS is about 1.3, which is very high. The refractin...
The Refractive Index of Silicon at Gamma Ray Energies The index of refraction n(E_{\\gamma})=1+\\delta(E_{\\gamma})+i\\beta(E_{\\gamma}) is split into a real part \\delta and an absorptive part \\beta. The abs... D Habs,MM Günther,M Jentschel,... 被引量: 19发表: 201...
The photonic structures enhance the free carrier injection effect on the Silicon index of refraction, by orders of magnitude. We present experimental demonstration of fast all-optical switching on a silicon photonic integrated device by employing a strong light-confinement structure to enhance sensitivity...
However, because of weaknesses associated with the fitting parameters, we propose here an alternate model which explains fairly well the dependence of the index of refraction on the optical gap. Furthermore, to explain the gradient of the refractive index vs optical gap plots, we see that a ...
Index of Refractionn20/D 1.544(lit.) StabilityStable. Water Solubilityinsoluble MSDS Silicon dioxide MSDS(Chinese) Toxicological Information CHEMICAL IDENTIFICATION RTECS NUMBER : VV7330000 CHEMICAL NAME : Silica, crystalline - quartz CAS REGISTRY NUMBER : ...
Optical Properties of Silicon This article contains a table and graphs on the optical properties of silicon . The table contains information about the dielectric constant , index of refraction , and absorption coefficient of silicon for different photon eSemiconductor, Virginia...
This modulator can be characterized as a silicon-waveguide-based metal oxide/semiconductor (MOS) capacitor phase shifter in which modulation of the index of refraction in silicon is obtained by exploiting the free-charge-carrier-plasma ... D Sheldon 被引量: 2发表: 2006年 Control of charge carri...
Further studies on the temperature variation of the refractive index of crystals The temperature coefficients of refraction of lithium fluoride, fluorspar, magnesia and quartz have been determined interferometrically for wavelengths between λ 2500 and λ 6000, from room temperature to 400°C. The value...
(RCP or LCP). All of the field patterns shown below focus on thez-central plane (labeled asz = 0 in the inset of Fig.1a).fTemporal evolution of RCP and LCP at the singularity point, respectively. In this work, the refractive index of silicon and silica arenSi = 3.47 andn...