As is well known, the atomic mass of silicon has not yet been determined with satisfactory accuracy. The value given in the International Table of Atomic Weights is 28.06. Practically the same value, 28.063, was given by Baxter, Weatherill and Scripturein 1923 from the ratio SiCl/4Ag. But ...
In order to evaluate the average amounts of silicon contamination in the bulk materials, wavelength dispersive X-ray fluorescence (WD-XRF) spectroscopy was used. Results similar to the XPS depth profiling measurement, were obtained with 0.04 ± 0.007 and 0.25 ± 0.01% silicon found ...
Silicon carbide powder has been mass-produced since 1893 for use as an abrasive. Grains of silicon carbide can be bonded together by sintering to form very hard ceramics which are widely used in applications requiring high endurance, such as car brakes and ceramic plates in bulletproof vests. ...
Through this mass transfer the melt in the vicinity of the large particles will be supersaturated. The result is the advancing growth of larger particles at the expense of the smaller ones giving fewer particles with a larger average grain size. This "pure" Ostwald ripening model presupposes a...
respectively. The p-type dopant was confirmed to be Al. After resolving the mass peak overlaps, the Al content in each specimen could be quantified within reasonable error and yielded an average value of 1e-19 atoms/cm3 (Table 1). Also indicated in the same table is the Si, C and Al...
If the carrier concentration is high, the initial average energy is close to the transport energy, which reduces the required activation energy and thus increases mobility considerably. Alternatively, according to the multiple trapping and release and transport model [80], only one fraction of the ...
A collection of nanoscale particles are a composite of carbon and metal oxide or silicon oxide. The composite particles have an average diameter from about 5 nm to about 1000 nm, and can be produced b
Conventional ion implantation of phosphorus and ion incrustation (non mass separated PF 5 molecular ions), have been used to realize the N + layer of single cristalline silicon solar cells. Various regrowth techniques have been investigated: classical thermal treatment, laser annealing in the liquid...
1). The average maximum temperature varied widely, 38.7 ± 21.2 °C, during the experimental period, above the optimal temperature. Cultivation at temperatures above 27 °C is known to cause stress to the plants18. Figure 1 Maximum (T° Max) and minimum (T° Min) temperatures, and ...
Fig. 2 presents the axial evolution of the average DR (Fig. 2 (a)) and the average film atomic content in O, Si, N and C (Fig. 2 (b) to (d)) as deduced from SE after calibration using IBA, for the three runs performed at SPT 650 °C with variable O2 flow rates. The therm...