Similarities and differences between silicon and carbon nanostructures: theoretical predictions. AIP Conf Proc. 2007; 963 :474.Zdetsis AD: Similarities and differences between silicon and carbon nanostructures: theoretical predictions. AIP Conf Proc 2007, 963:474....
Similarities and Differences Between Silicon and Carbon Nanostructures: Theoretical Predictions. Zdetsis AD: Similarities and differences between silicon and carbon nanostructures: theoretical predictions. AIP Conf Proc 2007, 963:474... Zdetsis,Aristides,D. - 《Aip Conference Proceedings》 被引量: 5发表...
Silicon boils at 3265 °C: this, while high, is still lower than the temperature at which its lighter congener carbon sublimes (3642 °C) and silicon similarly has a lower heat of vaporisation than carbon, consistent with the fact that the Si–Si bond is weaker than the C–C bond.[45...
The common feature to water, silicon, and carbon is the formation of tetrahedrally coordinated units. We exploit these similarities to develop a coarse-grained model of water (mW) that is essentially an atom with tetrahedrality intermediate between carbon and silicon. mW mimics the hydrogen-bonded...
Carbon-silicon-switch strategy, replacing one specific carbon atom in organic molecules with a silicon, has garnered significant interest for developing new functional molecules. However, the influence of a reaction regarding its selectivity and reactivi
1 TheSilicon-CarbonBond1.1TheChemicalPropertiesofSiliconandCarbonBothcarbonandsiliconaremembersofGroupIVoftheperiodictable.Inspiteofthiscloserelationship,therearenotonlysimilaritiesbutalsostrikingdifferencesbetweentheseelements.Carbonisthebasisofvegetableandanimallife,thecentralelementoforganicchemistry.Silicondominatesinthe...
The similarities in the formation process of Si-XIII and Si-IV strongly suggest the equivalence of the two phases; however, at this time, the association of the new phase with the hexagonal diamond silicon is inhibited by the rather low temperatures of its formation and a completely different ...
In this Review, we analyse the similarities and differences between 2DMs MOSFETs and silicon MOSFETs in the integrated circuits engineering process; we present potential solutions for channel, contact and dielectric engineering using 2DM to address the scaling challenges faced by a silicon-based device...
4H-silicon carbide (4H-SiC) is a polytype of silicon carbide, a compound of silicon and carbon. It is a wide bandgap semiconductor material that is often used in high-power and high-temperature electronic devices, due to its excellent thermal stability, high breakdown voltage, and high therma...
With this completed, we identify pathways towards more realistic and well-grounded applications of Si isotopes to questions in the Quaternary and deeper times. Throughout, we draw on literature for both marine and lacustrine records, highlighting similarities and differences where necessary. Our goal ...