Reliable Performance: As an original manufacturer product, the IMBG120R045M1HXTMA1 SICFET offers reliable performance and consistency in its operations. Compact Design: This SICFET is designed for surface mount applications, featuring a compact TO263 package that saves space in electronic devices. ...
Foreign exchange market interventions and the $-(sic) exchange rate in the long run 来自 国家科技图书文献中心 喜欢 0 阅读量: 35 作者:Beckmann,Joscha,Belke,Ansgar,Kuehl,Michael 摘要: This article examines whether foreign exchange mar 关键词: structural exchange rate models cointegration intervention...
Model Number IMBG120R045M1HXTMA1 Type RF TRANSISTOR Brand Name original Other attributes Mounting Type standard Description N channel mos Place of Origin Guangdong, China Package / Case standard Type MOSFET Operating Temperature Standard D/C
Chemokine receptor 2, intracranial hemorrhage, microglia, siRNA, tFNA Therapeutic siCCR2 Loaded by Tetrahedral Framework DNA Nanorobotics in Therapy for Intracranial Hemorrhage (Adv. Funct. 展开 关键词: chemokine receptor 2 intracranial hemorrhage microglia siRNA tFNA ...
Microstructure evolution and mechanical properties of SiC nanoparticles reinforced magnesium matrix composite processed by cyclic closed-die forging 来自 国家科技图书文献中心 喜欢 0 阅读量: 32 作者:Wang,Qudong,Wenzhen,Bing,Liao,Wenjun,Zhou,Hao,Guo,Wei ...
4H-SiC material is widely used in the field of power electronic devices due to its wide band gap and high critical electric field. In this paper, a 4H-SiC-based Schottky barrier diode (SBD) is designed with Sentaurus TCAD simulation software, and the peak surface electric field is reduced ...
摘要: FIGURES 19 – 23. Campsicnemus zigzag group male mid tibia. 19. C. mylloseta; 20. C. ogradyi; 21. C. ostlinx; 22. C. tahaanus; 23. C. zigzag.DOI: 10.5281/zenodo.184545 年份: 2008 收藏 引用 批量引用 报错 分享 全部来源 求助全文 ResearchGate 相似文献...