3C-SiC mesas were found to have complete 3C-SiC coverage with some of the mesas having electronic defects, while other mesas were found to be defect-free.Rachael L. Myers-WardLuke O. NyakitiJennifer K. HiteOrest J. GlembockiFrancisco J. Bezares...
doi:10.4028/WWW.SCIENTIFIC.NET/MSF.389-393.251Philip G. NeudeckJ. Anthony PowellAndrew J. TrunekDavid J. SpryGlenn M. BeheimEmye BenavagePhillip B. AbelWilliam M. VetterMichael DudleyTrans Tech PublicationsSilicon Carbide and Related Materials 2001 Pt.1...
Mark E. TwiggKarl D. HobartOrest J. GlembockiCharles R. Eddy, Jr.Marko J. TadjerR. T. HolmRichard L. HenryState-of-the-art program on compound semiconductors 45 (SOTAPOCS 45) -and- wide bandgap semiconductor materials and devices 7...
Ahlberg, Allen
limiting the ability of oxygen to embrittle the grain boundaries. While the formation of secondary phase nanoparticles indicate that oxygen was captured by the silicon, the fracture surfaces, inFigure 10, demonstrate that the 0.1 wt% SiC added was insufficient to prevent the formation of detrimental...