SI2301 P-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION The SI2301 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. ...
Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?68741. Document Number: 68741 S-81446-Rev. A, 23-Jun-08 www...
Document Number: 68741S-81446-Rev. A, 23-Jun-08www.vishay.com 1 P-Channel 20-V (D-S) MOSFET FEATURES •Halogen-free Option Available •TrenchFET ® Power MOSFET APPLICATIONS •Load Switch MOSFET PRODUCT SUMMARY V DS (V)R DS(on) (Ω)I D (A)a Q g (Typ.)- 20 0.112...
SI2301 P-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION The SI2301 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. ...