联系人信息 姓名 张永海 手机号码 13558017608 固定电话 0771-4894605 公司全称 南宁桓源电气有限公司 让卖家联系我 *联系信息: 咨询问题: 产品价格 产品型号 是否现货 代理加盟 *图形验证: 发送询价单 询价产品: 云永功率控制器WYU-RG100SI,WYU-PH25SI,WYU-DH250TM-R *联系信息: 产品信息 联系方式 南
Silicon AD-Dimer Binding on Si(100)doi:10.1557/PROC-389-35Peter J BedrossianArthur SmithHannes Jonsson
HAYAKAWA E,KHANOM F,YOSHIFUKU T,et al.Hot-complex-mediated abstraction and desorption of D adatoms by Hon Si(100). Phys.Rev.:B . 2002HAYAKAWA E,KHANOM F,YOSHIFUKU T. Hot-complex-mediated abstraction and desorption of D adatoms by H on Si(100)[J].Physical Review B,2002.033405....
Influence of the Si(100)-c(4×12)-Al surface phase on formation and electrical properties of thin iron filmsdoi:10.1063/1.3327421Dmitry GoroshkoNikolay GalkinAlexander Gouralnik
Kuo, Study of high quality indium nitride films grown on Si(100) substrate by RF-MOMBE with GZO and AlN buffer layers. J. Nanomater. 2012, 853021, (2012)Chen, W.-C.; Kuo, S.-Y. Study of high quality Indium Nitride films grown on Si(100) substrate by RF-MOMBE with GZO and ...
Contribution of Lifshitz-Van der Waals Interactions to the Surface Energy γT of Si(100)-based Surfaces using the Van Oss-Young-Dupre ModelAlex BrimhallAshley MascarenoEnder DavisSiO Nanotech LLC
doi:10.1007/s00339-012-6946-yM KotkataShehab MansourM.F. Kotkata * S.A. Mansour, Fabrication and electrical characterization of thermally deposited amorphous Se0.82In0.18 on n-Si (100), Appl Phys A, Materials Science and Processing, 2012,...
E. Haller, A raman scattering study of self-assembled pure isotope Ge/Si(100) quantum dots, Appl. Phys. Lett. 81 , 3855–3857 (2002).A Raman scattering study of self-assembled pure isotope Ge/Si (100) quantum dots. KolobovAV,MoritaK,ItohKM,HallerEE. Applied Physics Letters . 2002...
Carbon nanotubes on partially depassivated n-doped Si(100)(2×1):H substratesdoi:10.1103/PhysRevB.80.045415Salvador Barraza LopezPeter M AlbrechtJ LydingLopez SB, Albrecht PM, Lyding JW (2009) Carbon nanotubes on partially depassivated n-doped Si(100)-(21):H sub- strates. Phys Rev B ...
Electrochemical Impedance Study on n-type Si(100) in Hydrofluoric AcidJing Chie LinChien Ming LaiWern Dare JehngSheng Long Lee