产品型号WYU-RG100SI 货源所属商家已经过真实性核验 商品数量1000 所属系列信号转换器 关键词功率控制器 数量-+ 产品信息 联系方式 南宁桓源电气有限公司青岛分公司 电话: 手机: QQ:171234173 联系人:张琰钰 地址:青岛市城阳区崇阳路春和苑 代理经销品牌: ...
Masahiko TaniSpringer USBalgos MH, Jaculbia R, Defensor M, Afalla JP, Ibanes JJ, Bailon-Somintac M, et al. Shell to core carrier-transfer in MBE-grown GaAs/AlGaAs core-shell nanowires on Si(100) substrates. J Lumin. 2014;155:27-31....
The adsorption energetics of Ge dimers on the (1 0 0) surfaces of Ge and Si has been investigated using the first-principles molecular dynamics method. Four high-symmetry configurations have been considered and fully relaxed. The most stable configuration for Ge dimers on Si(1 0 0) is foun...
E. Haller, A raman scattering study of self-assembled pure isotope Ge/Si(100) quantum dots, Appl. Phys. Lett. 81 , 3855–3857 (2002).A Raman scattering study of self-assembled pure isotope Ge/Si (100) quantum dots. KolobovAV,MoritaK,ItohKM,HallerEE. Applied Physics Letters . 2002...
Contribution of Lifshitz-Van der Waals Interactions to the Surface Energy γT of Si(100)-based Surfaces using the Van Oss-Young-Dupre ModelAlex BrimhallAshley MascarenoEnder DavisSiO Nanotech LLC
Kuo, Study of high quality indium nitride films grown on Si(100) substrate by RF-MOMBE with GZO and AlN buffer layers. J. Nanomater. 2012, 853021, (2012)Chen, W.-C.; Kuo, S.-Y. Study of high quality Indium Nitride films grown on Si(100) substrate by RF-MOMBE with GZO and ...
doi:10.1007/s00339-012-6946-yM KotkataShehab MansourM.F. Kotkata * S.A. Mansour, Fabrication and electrical characterization of thermally deposited amorphous Se0.82In0.18 on n-Si (100), Appl Phys A, Materials Science and Processing, 2012,...
Investigation of the effect of annealing on Si(100) substrate modified by Ga+ focused ion beamIn this work, we studied the effect of annealing the silicon surface on the morphology of focused ion beam modified areas. It was found that an increase in the ion beam accelerating voltage during ...
HAYAKAWA E,KHANOM F,YOSHIFUKU T,et al.Hot-complex-mediated abstraction and desorption of D adatoms by Hon Si(100). Phys.Rev.:B . 2002HAYAKAWA E,KHANOM F,YOSHIFUKU T. Hot-complex-mediated abstraction and desorption of D adatoms by H on Si(100)[J].Physical Review B,2002.033405....
Growth of GaN on Thin SI {111} Layers Bonded to SI {100} Substratesdoi:10.1557/PROC-535-101J G FlemingJung Han