Low-temperature electrical resistivity measurements were carried out on ternary uranium transition metal silicides and germanides with the general formula UT(Si, Ge), where T = Ni, Ru, Rh, Pd, Ir and Pt. Experimental results pointed out the progression in the magnetic properties from spin-...
The kilowatt hour is a unit for measuring ___. How we can transfer ampere to watt? Define the conductivity and resistivity of a semiconductor material. What are the units of conductivity and resistivity? How is AC electrical power generated?
Electrical resistivity and metal-nonmetal transition in n-type doped 4H-SiC The electrical resistivity of 4H-SiC doped with nitrogen is analyzed in the temperature range 10–700 K for nitrogen concentrations between 3.5×1015 an... AFD Silva,J Pernot,S Contreras,... - 《Physical Review B》 ...
The compounds with A-1 5 structure possessing high transition temperatures into the superconducting state T (= 17 K for V3Si and* 18 K for Nb3Sn) are of great interest since they display on anomalous temperature behaviour of some physical properties (electrical doi...
The electrical resistivity of a series of Fe3Si1-xAlx alloys with 0≤x≤1 has been measured from 1.8 to 300 K. (dρ/dt)|300K was found to vary less than 20% over the composition range, while the residual resistivity ρ0 increased sixfold in going from Fe3Si to Fe3Al. We argue...
We have investigated the electrical resistivity of (0001)-oriented Ti_n_+1AC_n (A = Si, Ge, Sn, n = 1–3) thin films deposited by magnetron sputtering onto Al_2O_3(0001) substrates at temperatures ranging from 500 to 950 °C. Four-point-probe measurements show that all films are ...
Magnetic Ground State of a Heavy-Electron System: ${\\mathrm{U}}_{2}$${\\mathrm{Zn}}_{17}$ Measurements of the magnetic susceptibility, specific heat, and electrical resistivity of ${mathrm{U}}_{2}$${mathrm{Zn}}_{17}$ reveal a magnetic phase tran... HR Ott,H Rudigier,P Delsin...
protection of the melt from its environment (as for instance in an enclosed low-pressure casting unit); 3. when undisturbed, the melt may continue to be protected from the environment by its oxide and create little additional surface oxide by reaction with water vapour or hydrocarbon gases with...
We have determined the resistivity, carrier concentration, and Hall mobility as a function of thickness (700–3000 Å) of Ni2Si, NiSi, and NiSi2 l
Electrical resistivity change in amorphous Ta42Si13N45 films by stress relaxationElectrical ResistivityThermal AnnealingAlumina SubstrateGallium ArsenideAnnealing StepIn a first experiment, a reactively sputtered amorphous Ta 42 Si 13 N 45 film about 260nm thick deposited on a flat and smooth alumina ...