It showed a clear preferential diffusion of P to the Si/SiO2 interface regions. This behavior will act as a negative factor for the active doping of P in silicon quantum dot (QD) solar cells. As a result, the conversion efficiency of a heterojunction Si QD solar cell with a P-doped Si...
et al. Germanium nanowire field-effect transistors with SiO2 and high-κ HfO2 gate dielectrics. Appl. Phys. Lett. 83, 2432–2434 (2003) Article ADS CAS Google Scholar Zheng, G. F., Lu, W., Jin, S. & Lieber, C. M. Synthesis and fabrication of high-performance n-type silicon ...
Impact of illumination level and oxide parameters on Shockley–Read–Hall recombination at the Si-SiO2 interface. J. Appl. Phys. 71, 4422 (1992). Acknowledgements The work was supported by the Natural Science Foundation of China (11522543, 11475129, 51571153, and 11375134); the Program for New...
Micro-sized SiO was heated to form a Si/SiO2 composite of interconnected Si nanoparticles embedded in a SiO2 matrix due to the disproportionate of SiO. After etching, the SiO2 was removed forming a large portion of the original pores. After that, the micro-sized porous Si was coated carbon ...
(j) Cross-sectional HRTEM imaging of the Si/SiO2 + Pd–Cu–Si MG thin film and (k) the corresponding FFT image of the MG thin film. (l) XPS Pd3d region of the representative T2FlatCu sample. (For interpretation of the references to colour in this figure legend, the reader is ...
The a-SixC1−x buffers with different nonstoichiometric C/Si composition ratios are synthesized on SiO2/Si substrate by using a low-temperature plasma enhanced chemical vapor deposition. The GaN LEDs on different SixC1−x buffers exhibit different EL and C-V characteristics because of the ...
The interfacial reaction rate is the main controlling factor of oxide film growth. This corresponds to the beginning of the oxidation kinetics curve. As the reaction proceeds, Cr2O3, SiO2 and other oxide films are gradually generated to prevent the diffusion of oxygen elements; the interface ...
By magnesiothermic reduction of SiO2−GeO2 composite material, a nanostructured Si−Ge alloy with unique canyon-like surface porosity was prepared [176]. Wrinkled silica nanoparticles (WSNs) played a dual roles, the Si source and the structural template. The Si−Ge alloy exhibits 977 mA h...
We expect to further improve the photoresponsivity, response time and the 3 dB frequency by increasing the areal density of Ge-dots within the gate stack, and the thermal SiO2 since there is still a surrounding the Ge significant dots. parasitic capacitance produced by the layers of buffer ...
φs. FIG. 6 illustrates a curve 602 that plots surface charge density as a function of surface potential for an Si/SiO2 MOSCAP where the uniform dopant density is assumed to be 1016 cm−2 at room temperature. FIG. 6 also shows curve 604 that plots phase shift that is applied to the...