E. Spear "The energy of the dangling-bond states in a-Si", Phil. Mag. B , vol. 53, no. 1, pp.L1 -L7 1986Fritzsche H.The energy of the dangling-bond states in a-Si.Journal of Non crystalline Solids. 1987...
Contour plots of the charge density show the Ni—Si bond to be slightly stronger than the Ni—Ni and also that there is a large metallic component to the bonding. 展开 关键词: linearcombination-of-Gaussian-orbitals Ni3Si energy relaxation density DOI: 10.1103/...
Energy calculation of K1L1 multiply ionized Kβ satellite spectra emitted from Al, Al2O3, Si and SiO2doi:10.1016/0168-583X(95)00881-0... T.,Yamamoto,and,... - 《Nuclear Instruments & Methods in Physics Research》 被引量: 1发表: 1996年 Calculation of Al and Si KLV auger energies and...
For an individual bond energy of w, the adatom has a total energy of 4w. If the adatom now associates with other like adatoms, the energy decreases by 4θw because there are 4 reaction sites and a probability θ that each will be occupied. The energy per adatom is 4w − 4θw =...
We propose a complete model for the reconstructed surface based on scanning tunneling microscopy images and first-principles total-energy calculations. The structure and stability of Si ( 114 ) − ( 2 × 1 ) arises from a balance between surface dangling bond reduction and surface stress relief...
Guided ion beam studies of the reaction of Nin+ (n=2-16) with D2: nickel cluster-deuteride bond energies of cluster size are derived from threshold analysis of the kinetic-energy dependence of the endothermic reactions, and are compared to previously determined ... F Liu,R Liyanage,PB Armen...
In previous studies, this phenomenon has been attributed to the higher O-S bonding energy compared to that of the Si-S bond27,39. However, we believe that the poor hydrophilicity of the Si wafer is the main reason underlying the impossibility of direct growth of MoS2 crystals on nonoxide ...
(enlarged for higher Ge content) of the SiGe layer below. The Si film retains excellentcrystalline qualityprovided it is thin enough. Above a critical thickness, the strain energy increases to a point where it would be energetically favorable to form misfit dislocations that would release the ...
One way this superior performance could be leveraged is as energy savings. If a Si PIC has an insertion loss or optical power penalty that is around 2 dB larger relative to an InP counterpart, this would translate into significantly larger electricity consumption and, in turn, it would ...
The initial growth of Pb on Si(100) has been studied using first-principles total-energy calculations. We have determined the atomic structure of the straight lines that Pb forms on Si(100) when the coverage is a small fraction of a monolayer. These lines consist of asymmetric Pb dimers tha...